For the upgrade of its Inner Tracking System, the ALICE experiment plans to install a new tracker fully constructed with monolithic active pixel sensors implemented in a standard 180 nm CMOS imaging ...sensor process, with a deep pwell allowing full CMOS within the pixel. Reverse substrate bias increases the tolerance to non-ionizing energy loss (NIEL) well beyond 10131MeVneq∕cm2, but does not allow full depletion of the sensitive layer and hence full charge collection by drift, mandatory for more extreme radiation tolerance. This paper describes a process modification to fully deplete the epitaxial layer even with a small charge collection electrode. It uses a low dose blanket deep high energy n-type implant in the pixel array and does not require significant circuit or layout changes so that the same design can be fabricated both in the standard and modified process. When exposed to a 55Fe source at a reverse substrate bias of −6 V, pixels implemented in the standard and the modified process in a low and high dose variant for the deep n-type implant respectively yield a signal of about 115 mV, 110 mV and 90 mV at the output of a follower circuit. Signal rise times heavily affected by the speed of this circuit are 27.8+∕−5 ns, 23.2+∕−4.2 ns, and 22.2+∕−3.7 ns rms, respectively. In a different setup, the single pixel signal from a 90Sr source only degrades by less than 20% for the modified process after a 10151MeVneq∕cm2 irradiation, while the signal rise time only degrades by about 16+∕−2 ns to 19+∕−2.8 ns rms. From sensors implemented in the standard process no useful signal could be extracted after the same exposure. These first results indicate the process modification maintains low sensor capacitance, improves timing performance and increases NIEL tolerance by at least an order of magnitude.
A monolithic resistorless circuit has been designed for active reset of the N + P single-ended (common anode) single-photon avalanche diode (SPAD). This type of SPAD has enhanced the photon detection ...efficiency in the near-infrared (NIR) region relatively to the P + N (two-ended) SPAD. Due to this fact, the N + P SPAD is a better candidate for the light detection and range (LiDAR) working in the NIR region. The circuit is fabricated in a standard 0.18-μm CMOS image sensor process. The dead time after each photon detection is adjustable; the minimum measured value is 4 ns. The maximum photon count rate corresponding to this dead time is 2.5·10 8 photons/s. This circuit guarantees precise repeatable response, short and well-controlled dead time, and after-pulsing effect reduction. All these are essential for many SPAD applications and crucial for increasing the saturation level of the silicon photo multiplier (SiPM)based LiDAR systems working in strong background light conditions on sunny day.
We present the architecture and design of a CMOS single-photon avalanche diode (SPAD) pixel that was selected to be the basis for a gun muzzle flash detection camera. The SPAD sensor and auxiliary ...circuitry are fabricated in a standard <inline-formula> <tex-math notation="LaTeX">0.18-\mu \text{m} </tex-math></inline-formula> CMOS image sensor technology. The pixel integrates a <inline-formula> <tex-math notation="LaTeX">25-\mu \text{m} </tex-math></inline-formula> pitch SPAD, a variable-load quenching circuit implemented with a 1.8-V pMOS, and digital processing electronics providing an 8-bit output bus. The SPAD is low noise (around 100-Hz dark count rate at 1.8-V excess voltage) and has a real peak photon detection efficiency (not averaged on pixel pitch) of 9.2% at 450 nm (1.8-V excess voltage). The pixel delivers intensity information through photon counting, up to 256 counts per frame with down to <inline-formula> <tex-math notation="LaTeX">5-\mu \text{s} </tex-math></inline-formula> integration time for the full dynamic range. The pixel memories enable parallel processing and global-shutter readout, preventing motion artifacts and partial exposure effects. The pixel can acquire very fast optical events at a high frame-rate (up to 200 kilo frames/s) and at a single-photon level. The pixel has an 8-bit parallel output bus.
Paranoia and Self-Consciousness Fenigstein, Allan; Vanable, Peter A
Journal of personality and social psychology,
01/1992, Volume:
62, Issue:
1
Journal Article
Peer reviewed
A new instrument designed to assess paranoid thought in college students, together with reliability and validity data, was presented in Study 1. A single general factor accounted for a substantial ...portion of the variance in the full scale. Public self-consciousness was consistently and significantly correlated with the present measure of paranoia. In Study 2, both pretested paranoia and public self-consciousness were related to feelings of being watched (a classical manifestation of paranoia), although public self-consciousness had an effect only when there was a 2-way mirror present. In Study 3, self-attention, experimentally induced using a story construction task, again resulted in a heightened sense of being observed. Discussion focuses on paranoid cognition as characteristic of everyday thought and the implications of self-attention for social perception processes.
A new expression is derived for the transmission coefficient of incident electrons scattered by a varying potential with discontinuities. The expression is applicable above, below, and near the ...potential peak. As an example, electron transmission across the energy barrier in the emitter of an InP/InGaAs heterojunction bipolar transistor is calculated. Excellent agreement with a numerical calculation is obtained, even for electron energies close to the potential peak, where other expressions fail. It is shown how this new approach reduces to other expressions in limiting cases, and its validity in comparison to other approximations is discussed.< >
Parents of undergraduates were asked whether they would be more distressed by the sexual or the emotional infidelity of their child’s partner. Comparing the responses of mothers and fathers may offer ...a rare, “crucial” instance in which evolutionary and socialization perspectives offer different predictions. Socialization theory, broadly conceived, predicts an effect for the gender of the parent: Consistent with their differing gender socialization histories, mothers should be more distressed by the emotional infidelity of their child’s partner, and fathers by the sexual infidelity of their child’s partner. In contrast, an evolutionary psychology approach predicts little or no effect for the sex of the parents: Both mothers and fathers should be more distressed by infidelities that pose a greater threat to their genetic interests. Results were largely consistent with the predictions derived from evolutionary psychology: Both mothers and fathers regarded sexual infidelity as more distressing when committed by a daughter–in–law than by a son–in–law, and emotional infidelity as more distressing when it involved a son–in–law rather than a daughter–in–law. Discussion centered on the theoretical implications of research that examines the behavior of those who are, genetically, one step removed from the sexual behavior of others, but still affected by the reproductive consequences of that behavior.
Virus-induced gene silencing (VIGS) is an attractive approach for studying gene function. Although the number of virus vectors available for use in VIGS experiments has increased in recent years, ...most of these vectors are applied in annual or herbaceous plants. The aim of this work was to develop a VIGS vector based on the Grapevine virus A (GVA), which is a member of the genus Vitivirus, family Flexiviridae. The GVA vector was used to silence the endogenous phytoene desaturase (PDS) gene in Nicotiana benthamiana plants. In addition, an Agrobacterium-mediated method for inoculating micropropagated Vitis vinifera cv. Prime plantlets via their roots was developed. Using this method, it was possible to silence the endogenous PDS gene in V. vinifera plantlets. The GVA-derived VIGS vector may constitute an important tool for improving functional genomics in V. vinifera.
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