Press pack (PP) packaging technology has been applied to insulated-gate bipolar transistors (IGBTs) for high-voltage and high power density applications in recent years. The pressure distribution ...within PP IGBTs is very important because it affects both the electrical and thermal contact resistances, thermal cycling capability, and short-circuit current rating. Too much pressure will mechanically damage the chip and too little pressure will increase the thermal contact resistance, which eventually leads to chip thermal damage. In this paper, a finite-element multiphysics model cocoupled with an electrical field, thermal field, and mechanical field is proposed to analyze the collector current distribution, pressure distribution, and junction temperature distribution within PP IGBTs. The most important coupling variables, such as electrical and thermal contact resistances, for this cocoupled multiphysics model are calculated or measured by experiment through a single IGBT/fast-recovery diode chip submodule. Based on this multiphysics model, the influence of the high temperature generated by the chip's power dissipation on the pressure distribution within PP IGBTs (in the heating phase) is discussed, and then, compared with the pressure distribution in the clamping phase. The results show that the pressure distribution within PP IGBTs in the heating phase is extremely uneven and different from the value in the clamping phase. Furthermore, the mechanical model and its boundary conditions are verified through the pressure distribution experimental results in the clamping phase, which is measured based on the Fuji prescale film and the clamping test bench. Based on the simulation and experimental results, an optimization of the collector electrode and pedestal is proposed to improve the pressure distribution within PP IGBTs in the heating phase.
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•LIG electrodes are prepared using the low-cost, one-step and large-scale fabrication.•rGO and LIG show a negative temperature coefficient of resistance.•rGO can be adsorbed on LIG ...well and can protect the LIG from peeling off.•The proposed graphene-based temperature sensor shows good sensing capability.
In this work, a highly sensitive graphene-based temperature sensor is proposed, which is composed of reduced graphene oxide (rGO) as a temperature-sensitive layer and laser-induced graphene (LIG) as the flexible interdigital electrodes. Benefiting from the negative temperature coefficient of resistance (TCR) of both rGO and LIG, the rGO/LIG-based temperature sensor exhibits a high sensitivity of 1.56% °C−1 over a range of 25–45 °C with a resolution of 0.2 °C. Moreover, LIG is helpful for the large-scale preparation of the graphene-based temperature sensor and reducing the cost of fabrication. The graphene-based temperature sensor will demonstrate potential applications in health monitoring, such as skin temperature.
Most converter valves of IGBT modules use a water-cooling system. The cooling technology of water cooling system is mature and has considerable advantages. However, higher power density power ...electronics lead to greater cooling power. With the improvement of the heat dissipation power of power electronic devices, the traditional water cooling system will gradually fail to meet the heat dissipation requirements of power electronic devices, and new cooling systems need to be developed. In this paper, based on the existing traditional water-cooling system model, numerical simulation analysis technology is used to compare and analyze the different cooling materials (copper, aluminum) and cooling medium (water, liquid metal) under the working conditions. For deionized water and liquid metal, the heat dissipation effect is compared and analyzed, which shows that the heat dissipation performance of the heat dissipation system using copper and liquid metal is greatly improved. Based on this, the model of liquid metal heat dissipation system is proposed. Compared with the traditional cooling model, it shows its superiority in heat dissipation performance with highest temperature decreased by 20.4%.
The electronic properties of single/bi-layer SnSe are theoretically studied using first-principles approach based on density-functional theory (DFT). The band structure and lattice parameters are ...researched. In order to gain more desirable electronic property, the in-plane strain and external electric field are adopted to modulate their electronic properties. The simulation results demonstrate that no matter biaxial or uniaxial strain, the bilayer structure shows a better linearity character, but for armchair direction, the monolayer SnSe would receive a larger band gap tuning range. The biaxial strain also can induce indirect-direct band gap transformation. The electronic field Therefore, we suggest the tunable electronic property SnSe can be used as a strain or other application sensors.
Research in the Simulation Model of IGBT Package Peng Zhang; Ronggang Han; Rui Jin ...
2013 Sixth International Symposium on Computational Intelligence and Design,
2013-Oct., Volume:
1
Conference Proceeding
Simulation technology provides a powerful tool for the IGBT module design. The IGBT chip model and the interconnect parasitics are the most important factors for the package design of IGBT module. By ...the aid of the simulation software, the IGBT chip model is fulfilled and the package parasitics is extracted. So the whole simulation deign platform of IGBT package achieves.
Simulation technology provides a powerful tool for the package design. Parasitic are one of the most important factors for press pack IGBT. By the aid of the simulation software, the package ...parasitic is extracted and the current distribution among paralleled chips is analyzed. Simulation results confirm the theoretical analysis and verify the efficacy of the new approach.
In this paper, the broadband dielectric characteristics of PEEK material used in press pack IGBT devices are measured by the method of frequency-domain dielectric spectroscopy under temperatures from ...-40 °C to 180 °C and frequencies from 10 mHz to 1 MHz. The mechanism of the broadband dielectric response of PEEK material is analyzed and can be accurately described by dual-relaxation Cole-Cole model. The effects of temperature on broadband dielectric characteristics of PEEK material are analysed with thermal analysis results of Differential Scanning Calorimeter. When the temperature is above the glass transition temperature (153.5 °C), the complex relative permittivity of PEEK material increases sharply. The results of this paper can provide useful references for insulating packaging design of press pack IGBT devices under electrothermal composite stress.
Electrical field analysis of press-pack IGBTs Fu, Pengyu; Zhao, Zhibin; Cui, Xiang ...
2017 Sixth Asia-Pacific Conference on Antennas and Propagation (APCAP),
2017-Oct.
Conference Proceeding
High voltage IGBT module is the ideal option for the VSC-HVDC power transmission application. At present, bonded power module and press-pack module are available packaging technology for the high ...voltage IGBT. The press-pack packaging has such advantages as low inductance, low thermal impedance and short circuit failure mode over the bonded power module, and especially suits for the high power serial topology application. However, the characteristics and failure mechanisms of press-pack IGBTs are much less known with limited literature published. In this paper, we present the electrical field analysis of a 3D model of a press-pack IGBTs under the DC rating voltage test condition. We obtain the electrical field distribution results by using an FEM based electromagnetic field solver. The results reveal the potential electrical insulation failure modes of the press-pack IGBTs under DC rating voltage test condition: corona discharge at the edge of the silver plate, partial discharge at the micro gap between the die and PEEK frame and surface discharge at the surface of the PEEK frame.
Stray capacitance in semiconductor device dynamic test platform affects the switching waveform, especially in the testing of SiC semiconductor devices, which has a faster switching than silicon ...semiconductor devices. During turn-on and turn-off process, the collector-emitter voltage changes rapidly, and stray capacitance shunts a portion of the total current, which causes the measurement of a distorted result. In order to investigate the effect of stray capacitance and voltage change on current measurement results, an equivalent circuit model considering parasitic capacitance is built. Theoretical analysis shows that stray capacitance causes undesirable current distortion during switching transient. Experimental results verified the correctness of theoretical analysis.
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