Digital data, generated by corporate and individual users, is growing day by day due to a vast range of digital applications. Magnetic hard disk drives (HDDs) currently fulfill the demand for storage ...space, required by this data growth. Although flash memory devices are replacing HDDs in applications like mobile phones, laptops, and desktops, HDDs cover the majority of digital data stored in the cloud and servers. Since the capacity growth of HDDs is slowing down, it is essential to look for a potential alternative. One such alternative is domain wall (DW) memory, where magnetic domains in the form of two-dimensional or three-dimensional wires are used to store the information. DW memory (DWM) devices should satisfy the four basic operations, such as writing (nucleating domains or inserting DWs in memory element), storing (stabilizing DWs), shifting (moving DWs), and reading (reading magnetization direction). An external magnetic field or spin-transfer torque can be used to write the information. Spin–orbit torque or electric field may be used for shifting the DWs. The information can be read using tunneling magnetoresistance. The domains may be stored along the tracks using artificial pinning potentials. The absence of moving parts makes the DWM consume less power as compared to HDDs, and be more robust. The potential to stack many layers to store information in three dimensions makes them potentially a large storage capacity device. In addition to memory, DW devices also offer a route for making synaptic devices for neuromorphic computing.
Despite these potential advantages of DWM, significant advances in research are needed before DWM could become commercially viable. One of the major challenges associated with DWM is DW dynamics. Many problems, such as controlled DW motion, the stability of domains, reducing the dimensions of the DW devices are still to be addressed. Artificial pinning sites fabricated through either geometrical or non-geometrical methods have been proposed for controlling DW motion. This review paper presents a survey of the investigations carried out so far and the future perspective of such devices.
The magnetization reversal induced by spin orbit torques in the presence of Dzyaloshinskii-Moriya interaction (DMI) in perpendicularly magnetized Ta/CoFeB/MgO structures were investigated by using a ...combination of Anomalous Hall effect measurement and Kerr effect microscopy techniques. By analyzing the in-plane field dependent spin torque efficiency measurements, an effective field value for the DMI of ~300 Oe was obtained, which plays a key role to stabilize Néel walls in the film stack. Kerr imaging reveals that the current-induced reversal under small and medium in-plane field was mediated by domain nucleation at the edge of the Hall bar, followed by asymmetric domain wall (DW) propagation. However, as the in-plane field strength increases, an isotropic DW expansion was observed before reaching complete reversal. Micromagnetic simulations of the DW structure in the CoFeB layer suggest that the DW configuration under the combined effect of the DMI and the external field is responsible for the various DW propagation behaviors.
The effects of ion implantations through a mask on the structural and magnetic properties of Co80Pt20 films were investigated. The mask was patterned using the self-assembly of diblock copolymers. ...For implantation, high (40 keV for 14N+ and 100 keV for 40Ar+) and low (7.5 keV for 14N+ and 4.5 keV for 40Ar+) energy 14N+ and 40Ar+ ions were used to modify the structural and magnetic properties of these films. X-ray diffraction and TRIM simulations were performed for understanding the structural changes due to ion implantations. These results revealed the intermixing of Co atoms in lower layers and lattice expansion in Co80Pt20 magnetic and Ru layers. A lateral straggling of Co caused an increase in the exchange coupling in the masked region. Depletion of Co atoms in Co80Pt20 layer caused a decrease in the anisotropy constant, which were further confirmed by the alternating gradient force magnetometer and magnetic force microscopy results. The magnetic force microscopy images showed an increase in domain width and domain wall width confirming the above-mentioned effects.
Magnetic and structural properties of Co 80 Pt 20 films were modified by controlled ion implantation through a dot-patterned mask for possible application in the mass production of patterned ...recording media. The dot patterns were fabricated using self-assembly of di-block copolymers. The effects of 14 N + and 40 Ar + ion implantation at energies as high as 40 and 100 keV, respectively, were studied. Although both ions cause changes in the structural and magnetic properties, 40 Ar + ion implantation leads to more significant changes. The structural changes, predicted using simulations and experimentally observed using X-ray diffraction, indicate a mixing of Co into the layers below, leading to layers richer in Pt at the top. Magnetic force microscopy measurements show an increase in domain width and domain wall thickness as a function of ion fluences. The results are analyzed with measurements of magnetic anisotropy constant and micromagnetic simulations.
Spin–orbit torque (SOT) is a promising approach to manipulate the magnetization for high-performance spintronic applications. In conventional SOT heterostructures with heavy metal (HM)/ferromagnet ...layers, the SOT efficiency is determined by the charge-to-spin conversion, characterized by the spin Hall angle θSH of the HM layer. Researchers have investigated various HMs with different θSH to enhance the SOT efficiency while it is still limited because of the HM’s intrinsic properties. In this study, we employ a rare-earth holmium (Ho) layer on top of a ferromagnetic Co layer (Pt/Co/Ho) to enhance the SOT efficiency. An increased damping-like SOT efficiency up to 200% is achieved at an optimized thickness of 2-nm Ho, corresponding to a lower switching current density, which is 60% less compared to the sample without a Ho layer. The damping-like torque efficiency per current density is estimated at around 0.256 for Pt/Co/Ho heterostructures. Our results, herein, demonstrate that inserting a rare-earth metal affords an additional spin current and/or improves the spin transparency to enhance the SOT efficiency, providing a route for energy-efficient spintronic devices.
In this paper, we report the giant electric-field (E-field)-induced magnetic anisotropy and magnetization switching in CoNi/Pb(Mg 1/3 Nb 2/3 )O 3 -xPbTiO 3 (PMN-PT) magnetoelectric heterostructures. ...For CoNi/PMN-30%PT, the E-field-induced anisotropy shows a volatile behavior; whereas for CoNi/PMN-32%PT, a large and nonvolatile E-field-induced anisotropy field up to 54 kA/m is observed. These behaviors can be understood by measuring the strain versus the E-field curves of two kinds of substrates. On the basis of the E-field-induced nonvolatile magnetic switching, two stable magnetization states defined by applying E-field pulses were demonstrated in CoNi/PMN-32%PT heterostructure, which paves a new way for voltage-write magnetic random memory devices.
Spin-based memory technology is now available as embedded magnetic random access memory (eMRAM) for fast, high-density and non-volatile memory products, which can significantly boost computing ...performance and ignite the development of new computing architectures.
PDF
