InSb thin film was deposited on glass by r.f. sputtering using the InSb (atomic ratio of 1:1) target. The film was capped by SiO2 film to prevent the effusion of Sb of low melting point. After that, ...blue laser beam at 445 nm of controlled power density was irradiated using CW scanning mode. The film was crystalized successfully with keeping the ratio of In and Sb as (1:1). High electron Hall mobility of 1,050 cm2/(Vs) was obtained without degrading under glass. New device applications such as magnetic or infrared sensor system with poly Si TFTs are expected not only on glass but also on flexible panel such as on plastic sheet.
Highly photosensitive Si film of new structure was successfully fabricated using semiconductor blue laser diode annealing (BLDA). By adopting back-reflection layer, simulation results show 86% ...increase of light absorption in red or IR region. Peaks from XRD results showed that Si film was crystallized clearly after BLDA in spite of the new back-reflection layer of Ti. All the process for photoconductive film was conducted using r.f. sputtering and vacuum evaporation without adopting CVD. After H 2 annealing, photoconductivity for the patterned Si films of 50 nm thickness increased remarkably up from 1.2 ×10 -4 to 3.2 ×10 -1 S/cm under white light of 100 mW/cm 2 . Adopting back-reflection layer under the crystallized Si film using BLDA is promising to integrate functional photosensors with TFTs on panel.
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