Silicon photonics meets the electronics requirement of increased speed and bandwidth with on-chip optical networks. All-optical data management requires nonlinear silicon photonics. In silicon only ...third-order optical nonlinearities are present owing to its crystalline inversion symmetry. Introducing a second-order nonlinearity into silicon photonics by proper material engineering would be highly desirable. It would enable devices for wideband wavelength conversion operating at relatively low optical powers. Here we show that a sizeable second-order nonlinearity at optical wavelengths is induced in a silicon waveguide by using a stressing silicon nitride overlayer. We carried out second-harmonic-generation experiments and first-principle calculations, which both yield large values of strain-induced bulk second-order nonlinear susceptibility, up to 40 pm V(-1) at 2,300 nm. We envisage that nonlinear strained silicon could provide a competing platform for a new class of integrated light sources spanning the near- to mid-infrared spectrum from 1.2 to 10 μm.
The interaction of molecules with titanium oxide substrates may lead to substantial modifications of their optical properties, in particular a red shift of the absorption spectrum compared to that of ...bare titania. In the present paper we discuss the role of the interface between two molecules, catechol and dopamine, with gas-phase (TiO2) N clusters (N = 2, 4, 6). We studied, for the interface, the bidentate modes (the molecule bonded to two Ti sites via its two oxygen sites), which was the most energetically favorable, followed by the chelated modes (the molecule bonded to one Ti site via its two oxygen sites), and the monodentate mode (the molecule bonded to one Ti site via one oxygen site). The absorption spectra were calculated with time-dependent functional-theory with CAM-B3LYP for the description of charge-transfer excitations. We observe a red shift of the molecule/cluster systems with respect to the molecules and clusters alone. Moreover, the chelated mode was found to present bands at lower energies than the other modes, making it the most interesting mode to tune the absorption edge of these systems.
The adverse effects of engineered nanomaterials (ENMs) on bacterial populations found in wastewater treatment plants (WWTPs) or natural systems have been studied for more than a decade, but ...conflicting evidence on the matter still makes it a subject of considerable concern. In this paper, the short-term exposure impact of titanium dioxide nanoparticles (nTiO2), carboxyl-functionalized multiwall carbon nanotubes (f-MWCNT), and zero-valent iron nanoparticles (nZVI) toward activated sludge and Escherichia coli (E. coli) was investigated through respiration inhibition experiments. Microorganisms were exposed to nanoparticle concentrations of 50, 100 and 200 mg/L (nTiO2, f-MWCNT) and 20, 50 and 100 mg/L (nZVI). The experiments showed that nTiO2 produced no inhibition in activated sludge or E. coli; up to 100 mg/L of nZVI did not inhibit the activated sludge respiration but 50 mg/L inhibited 24 ± 3% the respiration of E. coli and damaged its cell membrane. Activated sludge respiration was inhibited 17 ± 3% with 200 mg/L of f-MWCNT while for E. coli the inhibition was 36 ± 15% and the cell membrane was damaged with a 100 mg/L dose. Transmission electron microscopy (TEM) showed nTiO2-bacteria and nZVI-bacteria surface interaction while bacteria appeared punctured by f-MWCNT. E. coli was more susceptible than activated sludge to the nanomaterials and nZVI was more toxic than f-MWCNT for E. coli. These results demonstrated the absence of acute toxicity effects of the studied nanomaterials at those concentrations expected to occur in activated sludge facilities, and it would only be a concern in case of extremely high inputs, underscoring the resilience of WWTPs biological treatment.
The CLARO-CMOS is a prototype ASIC that allows fast photon counting with 5 ns peaking time, a recovery time to baseline smaller than 25 ns, and a power consumption of less than 1 mW per channel. This ...chip is capable of single-photon counting with multi-anode photomultipliers and finds applications also in the read-out of silicon photomultipliers and microchannel plates. The prototype is realized in AMS 0.35 micron CMOS technology. In the LHCb RICH environment, assuming 10 years of operation at the nominal luminosity expected after the upgrade in Long Shutdown 2 (LS2), the ASIC must withstand a total fluence of about 610 super(12) 1 MeV n sub(eq)/cm super(2)neq/cm2 and a total ionizing dose of 400 krad. A systematic evaluation of the radiation effects on the CLARO-CMOS performance is therefore crucial to ensure long term stability of the electronics front-end. The results of multi-step irradiation tests with neutrons and X-rays up to the fluence of 10 super(14) cm super(-2) and a dose of 4 Mrad, respectively, are presented, including measurement of single event effects during irradiation and chip performance evaluation before and after each irradiation step.
The CLARO8 chip has been designed for single-photon counting in the upgraded RICH detector of the LHCb experiment at CERN. The chip has 8 channels with 5ns peaking time and a recovery time better ...than 25ns. Each channel is made of a charge amplifier with 2-bit settable attenuation, plus a comparator with a 6-bit settable threshold, and the configuration register is protected against Single Event Upsets by triple modular redundancy. In order to ensure stable operation of the upgraded RICH detectors over the expected lifetime of the experiment after the upgrade, the performance of the CLARO8 in high radiation fields has been assessed. These chips will be exposed, during the whole upgrade running phase, to a total ionizing dose of 200krad, a neutron fluence of 3×1012 1MeVneq/cm2 and a high energy hadrons fluence of 1.2×1012cm−2. Systematic irradiation campaigns have been performed using ions, protons and mixed-field high-energy hadron beams. This paper describes the radiation hardness campaign of the CLARO8 chips and the main results of its extensive characterisation.
Understanding Doping In Silicon Nanostructures Ossicini, S.; Iori, F.; Degoli, E. ...
IEEE journal of selected topics in quantum electronics,
11/2006, Volume:
12, Issue:
6
Journal Article
Peer reviewed
The effects of both single doping and simultaneous codoping on the structural, electronic, and optical properties of Si nanocrystals are calculated by the first-principles method. We show that the ...amount of the nanocrystal relaxation around the impurity is directly related to the impurity valence. Moreover, both the neutral impurity formation energies and the impurity activation energies scale with the reciprocal radius. Interestingly, no significant variation of the activation energy on the impurity species is found, and the cluster relaxation gives a minor contribution to it. The role of the impurity position within the nanocrystal has also been elucidated showing that the subsurface positions are the most stable ones. We show that, if the carriers in the Si nanocrystals are perfectly compensated by simultaneous doping with the n- and p-type impurities, the nanocrystals undergo a minor structural distortion around the impurities. The formation energies are always smaller than that for the corresponding single-doped cases. Moreover, in the case of codoping, the bandgap is strongly reduced with respect to the gap of the pure crystals showing the possibility of an impurity-based engineering of the photoluminescence properties of the Si nanocrystals
A search for charge-parity (CP) violation in D^{0}→K^{-}K^{+} and D^{0}→π^{-}π^{+} decays is reported, using pp collision data corresponding to an integrated luminosity of 5.9 fb^{-1} collected at a ...center-of-mass energy of 13 TeV with the LHCb detector. The flavor of the charm meson is inferred from the charge of the pion in D^{*}(2010)^{+}→D^{0}π^{+} decays or from the charge of the muon in Bover ¯→D^{0}μ^{-}νover ¯_{μ}X decays. The difference between the CP asymmetries in D^{0}→K^{-}K^{+} and D^{0}→π^{-}π^{+} decays is measured to be ΔA_{CP}=-18.2±3.2(stat)±0.9(syst)×10^{-4} for π-tagged and ΔA_{CP}=-9±8(stat)±5(syst)×10^{-4} for μ-tagged D^{0} mesons. Combining these with previous LHCb results leads to ΔA_{CP}=(-15.4±2.9)×10^{-4}, where the uncertainty includes both statistical and systematic contributions. The measured value differs from zero by more than 5 standard deviations. This is the first observation of CP violation in the decay of charm hadrons.
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