The problem of ensuring micro and nanodevices' main quality indices (performance, reliability and manufacturability) at design stage is considered. Group technologies used in micro and nanodevices' ...production provide high correlation of device parameters formed simultaneously in single technological cycle. This imposes restrictions on the methods of ensuring the serial availability and reliability of micro and nanodevices. Existing design technique does not allow to reach optimal combination of performance, manufacturability and reliability indices for devices batch. The purpose of this paper is to develop a micro and nanodevices' complex design methodology that would allow to reach optimal combination of main quality indices using existing group technologies: performance indices and serial availability in given manufacturing conditions and reliability in given operating conditions. To achieve this goal an additional stage of design and technological optimization is introduced into conventional process scheme. Input parameters for this stage are device's design parameters from circuit design and design engineering stages, technological errors of these parameters from technological preparation stage and data on the device design parameters and performance indices' kinetics under given operating conditions. As a result of the optimization, corrections to the nominal device design parameters that maximize the target function are determined. The objective function is either probability of finding device performance indices inside imposed limits range, or probability of performing specified functions during given operating time, or gamma-percent operating time to parametric failure. Submitted methodology was tested on micro and nanoelectronic devices, namely, microwave mixer and rectifier with resonant-tunneling diode as nonlinear element.
The article presents results of the numerical studies of aerodynamic processes in excavated sections of coal mines. The effect of the ventilation and degassing schemes and their parameters on the ...oxygen content and a danger of spontaneous coal combustion are described. The influence of geological and mining factors on the endogenous fire hazard of the coal bed prone to spontaneous combustion is analyzed. It is recommended to reduce endogenous fire hazards of mining flat gas-bearing coal beds of the Kuznetsk coal basin.
A solution to the problem of design and technological optimization (DTO) of resonant-tunneling diodes (RTDs) based on the electrical parameters of nonlinear frequency converters (FCs) is proposed to ...ensure their reliability in given operating conditions. A software package has been developed that makes it possible to perform an analysis of the reliability of FC microwave radio signals based on RTDs and to carry out DTO of the electrical characteristics of the FC in order to ensure reliability under specified operating conditions The developed software complex is tested on a wideband RTD-based balanced microwave frequency mixer. It was revealed that performing DTO on the mentioned mixer allows us to increase its gamma-percentage resource by 7.5 times, which proves that DTO is a perspective way to ensure RTD-based FC reliability.
The solution of the resonant-tunneling diode-based subharmonic microwave radio signals mixer’s reliability in given operating conditions are presented. The goal was achieved by design and ...technological optimization of the device’s electrical parameters. The optimal combination of the mixer’s electrical parameters was determined by a software suite developed by the authors. The gamma-percentage resource was increased by 1.49 times after optimization.
Resonant-tunneling diodes (RTD) are prospective EHF and UHF electronics elements. Using RTDs as radio frequency converter's nonlinear element would allow to improve converter's performance indices ...and extend its frequency range up to THz. The purpose of research is investigating kinetics of the RTD's I-V curve under given operating conditions, such as high temperature and ionizing radiation's influence. For this case, special mathematical models are submitted. These models describe RTD I-V curves's degradation under high temperature and ionizing radiation's influence. Basing on described models a program package allowing to simulated RTD I-V curves's kinetics under listed factors' influence was developed. Results' adequacy is verified by comparison with experimental data.
The object of research is a resonance-tunneling diode (RTD) based on multilayer AlGaAs heterostructures. A software complex with high-speed algorithm modeling the RTD current-voltage (I-V) ...characteristic's initial section with the possibility of carrying out a computer statistical experiment for studying the effect of technological errors of the diode design parameters on its I-V characteristic is submitted; the results of such study are shown
In the current work, the problem of UHF RFID passive tag sensitivity increase is considered. Tag sensitivity depends on HF signal rectifier efficiency and antenna-rectifier impedance matching. ...Possibility of RFID passive tag sensitivity increase up to 10 times by means of RTD use in HF signal rectifier in comparison with tags based on Schottky barrier diode is shown.
In the present work the thermal degradation of IV curves of AlAs/GaAs resonant tunneling diodes using artificial aging method was investigated. The dependency of AuGeNi specific ohmic contact ...resistance on time and temperature was determined.
The purpose of this study is to analyze the impact of high temperature and gamma-irradiation on the electrical characteristics of the balanced SHF mixer based on the resonant-tunnelling diodes during ...its operation. Failures caused by irreversible changes in the nonlinear element's electrical characteristics under the mentioned operational factors' effect investigated. Revealed that the failure is caused by the mixer's combination frequency 1-1 conversion loss' growth. Individual times to failure, matching the mixer's actual operating conditions, were obtained.
A model of degradation of AlGaAs-heterostructures has been developed. Parasitic resistance growth and diffusion of aluminum and donor impurities are considered as the main reasons of degradation of ...the structure. Current transfer models are generalized to the case of structures with continuous impurity distribution profiles. Algorithms based on numerical methods with reduced time complexity have been developed. RTS CVC was calculated before and after the annealing operation in order to verify the models. According to the results of the calculation, it was concluded that the developed algorithms are advisable for reliability prediction applications.
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