Highlights ► nPt functions as a strong free radical scavenger in acute cerebral ischemia of mice. ► nPt ameliorates neurological function and brain damage in acute cerebral infarction. ► Ischemic ...damage was worsened by tPA, but such deterioration was prevented by nPt. ► In vivo imaging of MMP was well correlated to acute cerebral ischemic damage. ► nPt showed neuroprotective effect on neurovascular unit and inactivated MMP-9.
By using state-of-the-art printing technologies and functional inks, we have demonstrated organic nonvolatile flexible random-access-memory matrices with a nondestructive read-out capability and a ...time-continuous current output; these functionalities have not been simultaneously achieved even by silicon-based conventional memory. A memory cell comprising three transistors becomes possible with inkjet printing and other solution-based processes, which can use ferroelectric copolymer ink comprising poly(vinylidenefluoride-co-trifluoroethylene) and insulating ink comprising polyimide precursors properly within the planer plastic substrate. A large ldquo1 : 0rdquo current ratio of 10 5 is observed in air when it is annealed at 135degC , which is sufficiently low to be compatible with many plastic substrates. When stored in air, the ldquo1 : 0rdquo ratio was still 10 4 after 15 days and 10 3 after 5 months, which is sufficient for practical applications. Furthermore, human-scale communication sheets were manufactured as the first demonstration utilizing large-area organic memories.
An on-chip buck converter which is implemented by stacking chips and suitable for on-chip distributed power supply systems is proposed. The operation of the converter with 3-D chip stacking is ...experimentally verified for the first time. The manufactured converter achieves a maximum power efficiency of 62% for an output current of 70 mA and a voltage conversion ratio of 0.7 with a switching frequency of 200 MHz and a 2 times2 mm on-chip LC output filter. The active part and the passive LC output filter are implemented on separate chips fabricated in 0.35-mum CMOS and connected with metal bumps. The use of glass epoxy interposer to increase the maximum power efficiency up to 71.3% is also discussed.
We examine the properties of a previously discovered population of globular clusters in the heart of the rich galaxy cluster Abell 1185 that might be intergalactic in nature. Deep images obtained ...with the Advanced Camera for Surveys (ACS) aboard Hubble Space Telescope (HST) confirm the presence of ~1300 globular clusters brighter than IF814W ≃ 27.3 mag in a field devoid of any large galaxies. The luminosities and colors of these objects are found to be similar to those of metal-poor globular clusters observed in many galaxies to date. Although a significant fraction of the detected globular clusters undoubtedly reside in the outer halos of galaxies adjacent to this field, detailed modeling of their distribution suggests that the majority of these objects are likely to be intergalactic, in the sense that they are not gravitationally bound to any individual galaxy. We conclude that the true nature and origin of the globular cluster population in the core of A1185 − galactic residents or intergalactic wanderers − remains uncertain, and suggest how future observation could resolve this ambiguity.
An integrated system of organic FETs (OFETs) and plastic actuators is proposed, and it is applied to a Braille sheet display. Some circuit technologies are presented to enhance the speed and the ...lifetime for the Braille sheet display. An OFET SRAM is developed to hide the slow transition of the actuators. Developed five-transistor SRAM cell reduces the number of the bit lines by one-half and reduces the SRAM cell area by 20%. Pipelining the write-operation reduced the SRAM write-time by 69%. Threshold voltage control technology using a back gate increased the static noise margin of SRAM and compensated for the chemical degradation of the OFETs after 15 days. The oscillation frequency tuning range from -82% to +13% in a five-stage ring oscillator is also demonstrated with the threshold voltage control technology. The overdrive techniques for the driver OFETs reduced the transition time of the actuator from 34 s to 2 s. These developed circuit technologies achieved the practical 1.75-s operation to change all 144 Braille dots on Braille sheet display and will be essential for the future large area electronics made with OFETs
Backgate biasing is a promising technique for high speed systems. Leakage can be reduced during standby periods by reverse bias while adequate bias in active mode can balance process and temperature ...variations. This technique introduces no delay penalty in active mode but slow wake up time results in system performance degradation. In this paper, we demonstrate a circuit that provides fast charging of the backgate through a large MOSFET directly connected to the supply. A circuit based on a mirror delay is used to precisely turn off this MOSFET when the backgate voltage has reached the required bias voltage for active mode operation. A nonlinearity compensation operation is implemented to guarantee precise control of the timing despite a non-constant backgate charging rate during transition due to nonlinear backgate capacitance. A sleep-to-active mode transition on the order of 10 ns is demonstrated in a 90 nm CMOS technology. The accelerator occupies less than 2% of the total chip area, consumes 600 muW during the transitions and does not add any bias current during active and sleep modes.
A high-sensitivity capacitive-coupling receiver is presented for wireless wafer probing systems. The receiver with the optimum logic threshold (OLT) achieves the highest sensitivity of 25 mV at the ...data rate of 2 Gb/s in 0.18-mum CMOS. The OLT receiver increases the communication distance by more than four times while providing tolerance against distance-voltage-area variations.
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