Current guidelines for esophageal cancer contouring are derived from traditional 2-dimensional fields based on bony landmarks, and they do not provide sufficient anatomic detail to ensure consistent ...contouring for more conformal radiation therapy techniques such as intensity modulated radiation therapy (IMRT). Therefore, we convened an expert panel with the specific aim to derive contouring guidelines and generate an atlas for the clinical target volume (CTV) in esophageal or gastroesophageal junction (GEJ) cancer.
Eight expert academically based gastrointestinal radiation oncologists participated. Three sample cases were chosen: a GEJ cancer, a distal esophageal cancer, and a mid-upper esophageal cancer. Uniform computed tomographic (CT) simulation datasets and accompanying diagnostic positron emission tomographic/CT images were distributed to each expert, and the expert was instructed to generate gross tumor volume (GTV) and CTV contours for each case. All contours were aggregated and subjected to quantitative analysis to assess the degree of concordance between experts and to generate draft consensus contours. The panel then refined these contours to generate the contouring atlas.
The κ statistics indicated substantial agreement between panelists for each of the 3 test cases. A consensus CTV atlas was generated for the 3 test cases, each representing common anatomic presentations of esophageal cancer. The panel agreed on guidelines and principles to facilitate the generalizability of the atlas to individual cases.
This expert panel successfully reached agreement on contouring guidelines for esophageal and GEJ IMRT and generated a reference CTV atlas. This atlas will serve as a reference for IMRT contours for clinical practice and prospective trial design. Subsequent patterns of failure analyses of clinical datasets using these guidelines may require modification in the future.
► This is the first study to apply SPMDs as a monitoring tool for PAH and PCB exposure in South African marine waters. ► This is the first study in 30 years to assess exposure to PAHs and PCBs along ...the entire South African coastline. ► Mussels and SPMDs provide information on both the net biologically available and dissolved fractions. ► SPMDs provide toxicological information as they identify petrogenic contaminants and accumulate dioxin-like PCBs.
A distinct lack of historical and current data on the status of organic pollutant contaminants within the South African marine environment is evident. This has highlighted the need for more current organic pollutant assessments. Reference mussels and SPMDs were transplanted at five South African harbour sites to assess organic bioaccumulation in brown mussels (Perna perna) and semi-permeable membrane devices (SPMDs). Spatial patterns of PAH and PCB contaminants were determined by GC–MS and GC–ECD after appropriate sample preparation. Significant (p<0.05) spatial differences were observed between the sites. Results indicate no correlations between the passive device and the transplanted mussels; however the SPMDs provided complementary information on the presence of dioxin-like PCBs within the environment not detected by the mussel. The results indicate that information provided by both the mussels and SPMDs allow for a more in depth scrutiny of environmental conditions as a result of anthropogenic influence.
This paper reports on an extensive analysis of the trapping processes and of the reliability of experimental AlGaN/GaN MIS-HEMTs, grown on silicon substrate. The study is based on combined pulsed ...characterization, transient investigation, breakdown, and reverse-bias stress tests, and provides the following, relevant, information: 1) the exposure to high gate-drain reverse-bias may result in a recoverable increase in the on-resistance (RON), and in a slight shift in threshold voltage; 2) devices with a longer gate-drain distance show a stronger increase in RON, compared to smaller devices; 3)current transient measurements indicate the existence of one trap level, with activation energy of 1.03 ± 0.09 eV; and 4) we demonstrate that through the improvement of the fabrication process, it is possible to design devices with negligible trapping. Furthermore, the degradation of the samples was studied by means of step-stress experiments in off-state. Results indicate that exposure to moderate-high reverse bias (<; 250 V for LGD = 2 μm) does not induce any measurable degradation, thus confirming the high reliability of the analyzed samples. A permanent degradation is detected only for very high reverse voltages (typically, VDS = 260-265 V, on a device with LGD = 2 μm stressed with VGS = - 8 V) and consists of a rapid increase in gate leakage current, followed by a catastrophic failure. EL measurements and microscopy investigation revealed that degradation occurs close to the gate, in proximity of the sharp edges of the drain contacts, i.e., in a region where the electric field is maximum.
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