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  • Ferroelectric materials for... Ferroelectric materials for neuromorphic computing
    Oh, S.; Hwang, H.; Yoo, I. K. APL materials, 09/2019, Volume: 7, Issue: 9
    Journal Article
    Peer reviewed
    Open access

    Ferroelectric materials are promising candidates for synaptic weight elements in neural network hardware because of their nonvolatile multilevel memory effect. This feature is crucial for their use ...
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  • Two Series Oxide Resistors ... Two Series Oxide Resistors Applicable to High Speed and High Density Nonvolatile Memory
    Lee, M.-J.; Park, Y.; Suh, D.-S. ... Advanced materials (Weinheim), 11/2007, Volume: 19, Issue: 22
    Journal Article
    Peer reviewed

    A memory cell consisting of a Pt/VO2/Pt switch element and a Pt/NiO/Pt memory element connected in series. By applying a voltage higher than Vth of 0.6 V, the switch element reaches the on state and ...
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  • Prevalence of sarcopenia an... Prevalence of sarcopenia and sarcopenic obesity in Korean adults: the Korean sarcopenic obesity study
    Kim, T.N; Yang, S.J; Yoo, H.J ... International Journal of Obesity, 08/2009, Volume: 33, Issue: 8
    Journal Article
    Peer reviewed
    Open access

    Objectives: To examine the prevalence of sarcopenia and sarcopenic obesity (SO) as defined by different indices, including appendicular skeletal muscle mass (ASM)/height2, skeletal muscle mass index ...
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  • Write Current Reduction in ... Write Current Reduction in Transition Metal Oxide Based Resistance Change Memory
    Ahn, S.-E.; Lee, M.-J.; Park, Y. ... Advanced materials (Weinheim), 03/2008, Volume: 20, Issue: 5
    Journal Article
    Peer reviewed

    A novel memory cell structure with a Pt/Ti‐doped NiO/Pt architecture is shown to exhibit the lowest write current reported thus far for a unipolar switching resistance‐change‐based device, as shown ...
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  • Resistance switching of the... Resistance switching of the nonstoichiometric zirconium oxide for nonvolatile memory applications
    Dongsoo Lee; Hyejung Choi; Hyunjun Sim ... IEEE electron device letters, 10/2005, Volume: 26, Issue: 10
    Journal Article
    Peer reviewed

    The resistance switching behavior and switching mechanism of nonstoichiometric zirconium oxide thin films were investigated for nonvolatile memory application. The Pt/ZrO/sub x//p/sup +/-Si sandwich ...
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  • Collision energy dependence... Collision energy dependence of moments of net-kaon multiplicity distributions at RHIC
    Adkins, J.K.; Agakishiev, G.; Ajitanand, N.N. ... Physics letters. B, 10/2018, Volume: 785
    Journal Article
    Peer reviewed
    Open access

    Fluctuations of conserved quantities such as baryon number, charge, and strangeness are sensitive to the correlation length of the hot and dense matter created in relativistic heavy-ion collisions ...
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  • Enhanced antimicrobial stew... Enhanced antimicrobial stewardship based on rapid phenotypic antimicrobial susceptibility testing for bacteraemia in patients with haematological malignancies: a randomized controlled trial
    Kim, J.-H.; Kim, I.; Kang, C.K. ... Clinical microbiology and infection, January 2021, 2021-Jan, 2021-01-00, 20210101, Volume: 27, Issue: 1
    Journal Article
    Peer reviewed
    Open access

    Recently, rapid phenotypic antimicrobial susceptibility testing (AST) based on microscopic imaging analysis has been developed. The aim of this study was to determine whether implementation of ...
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  • Color Sequence Preserving D... Color Sequence Preserving Decolorization
    Yoo, M.-J.; Lee, I.-K.; Lee, S. Computer graphics forum, 05/2015, Volume: 34, Issue: 2
    Journal Article
    Peer reviewed

    Many visualization techniques use images containing meaningful color sequences. If such images are converted to grayscale, the sequence is often distorted, compromising the information in the image. ...
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  • Decellularization for whole organ bioengineering
    Arenas-Herrera, J E; Ko, I K; Atala, A ... Biomedical materials (Bristol), 02/2013, Volume: 8, Issue: 1
    Journal Article
    Peer reviewed

    Organ transplantation in an orthotopic location is the current treatment for end-stage organ failure. However, the need for transplantable organs far exceeds the number of available donor organs. As ...
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  • A Low-Temperature-Grown Oxi... A Low-Temperature-Grown Oxide Diode as a New Switch Element for High-Density, Nonvolatile Memories
    Lee, M.-J.; Seo, S.; Kim, D.-C. ... Advanced materials (Weinheim), 01/2007, Volume: 19, Issue: 1
    Journal Article
    Peer reviewed

    A one‐diode/one‐resistor structure, Pt/NiO/Pt/p‐NiOx/n‐TiOx/Pt, has been fabricated. This novel structure exhibits bistable resistance switching under forward bias, while the diode suppresses ...
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