Analysis of C-V characteristics o ICB deposited metal/n-Si(111 and metal/p-Si(100) (metalAg,Pb) Schottky junctions
Cvikl, Bruno ; Korošak, Dean
The capacitance, C, of the assured structure of the ionized cluster beam deposited Schottky junction, consisting of the metal/metal-enriched Si-region/Si-substrate, has been derived incorporating the ...salient features of the theory of the disorded induced gap states under the depletion approximation. The results are compared to the C-V measurements of our ICB deposited metal/n-Si(111) and metal/p-Si(100) (metal = Ag and Pb) Schottky diodes. The dertived expression sufficiently well describes the metal/n-Si(111) C-V room temperature data only, but it fails to account for both ICB deposited metal/p-Si(100) Schottky junctions.
It was not necessary to add the material to the shelf.
Bibliographic material was successfully added on shelf.
Adding bibliographical material on shelf was not successful.
Material is already on the shelf.
Permalink
URL:
Impact factor
Access to the JCR database is permitted only to users from Slovenia. Your current IP address is not on the list of IP addresses with access permission, and authentication with the relevant AAI accout is required.
Year
Impact factor
Edition
Category
Classification
JCR
SNIP
JCR
SNIP
JCR
SNIP
JCR
SNIP
Select the library membership card:
DRS,
in which the journal is indexed
Database name
Field
Year
Links to authors' personal bibliographies
Links to information on researchers in the SICRIS system
Subject headings in COBISS General List of Subject Headings
Select pickup location
The material from the parent unit is free. If the material is delivered to the pickup location from another unit, the library may charge you for this service.
