E-resources
Peer reviewed
-
Yoo, Jinhyuk; Kim, SoonKon; Jeon, Woojin; Park, Areum; Choi, Donghee; Choi, Byoungdeog
IEEE electron device letters, 09/2019, Volume: 40, Issue: 9Journal Article
The charge trapping characteristics of the high-k laminated traps with different thickness ratios were investigated in order to improve the distribution of threshold voltage and the charge loss problems in 3D NAND flash memories with TCAT structure. In this letter, the interfacial layers are formed between the HfO 2 /Al 2 O 3 laminated films, which increase trap sites and improve charge storage capability. In addition, due to the difference in bandgap between HfO 2 and Al 2 O 3 , the HfO 2 layer forms a deep quantum well and the Al 2 O 3 layer acts as a barrier to prevent the loss of electrons captured in the charge trapping layer. The barriers prevent trapped electrons from escaping to other layers. In other words, it reduces the loss of charges from the charge trapping layer to Si or gate electrode. Also, the number of interfaces and the ratio of appropriate laminate film thickness are important factors for obtaining good data retention characteristics. The experimental results show a higher charge storage density and a larger memory window of 11.5 V in the structure that has many interfaces and a 1/1 of HfO 2 /Al 2 O 3 thickness ratio. In this structure, the leakage current is 4.61<inline-formula> <tex-math notation="LaTeX">\times </tex-math></inline-formula> 10 −9 A/cm 2 and charge loss rate is 14.9%, which are the lowest values in tested structures. The proposed high-k laminated trap structure may be very useful in future 3D NAND flash memory device applications.
![loading ... loading ...](themes/default/img/ajax-loading.gif)
Shelf entry
Permalink
- URL:
Impact factor
Access to the JCR database is permitted only to users from Slovenia. Your current IP address is not on the list of IP addresses with access permission, and authentication with the relevant AAI accout is required.
Year | Impact factor | Edition | Category | Classification | ||||
---|---|---|---|---|---|---|---|---|
JCR | SNIP | JCR | SNIP | JCR | SNIP | JCR | SNIP |
Select the library membership card:
If the library membership card is not in the list,
add a new one.
DRS, in which the journal is indexed
Database name | Field | Year |
---|
Links to authors' personal bibliographies | Links to information on researchers in the SICRIS system |
---|
Source: Personal bibliographies
and: SICRIS
The material is available in full text. If you wish to order the material anyway, click the Continue button.