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Ting-Hao Chang; Shoou-Jinn Chang; Chiu, C. J.; Chih-Yu Wei; Yen-Ming Juan; Wen-Yin Weng
IEEE photonics technology letters, 2015-April15,-15, 2015-4-15, Volume: 27, Issue: 8Journal Article
The electrical performance of amorphous indium gallium oxide (a-IGO) thin-film transistors applied as deep-ultraviolet (DUV) phototransistors is investigated. It was found that the bandgap of a-IGO can be engineered by altering its chemical composition. The performance of the phototransistors depended strongly on In 2 O 3 content in the IGO film. When the indium content increases from 21% to 31%, the phototransistor cutoff red-shifted from 280 to 320 nm. The DUV-to-visible rejection ratio and photoresponsivity of the fabricated phototransistors were ~10 5 and 0.18 A/W.
