Angular dispersion of photons and phonons in a photonic crystal of selectively grown GaN pyramids containing an InxGa1-xN quantum well structure

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Angular dispersion of photons and phonons in a photonic crystal of selectively grown GaN pyramids containing an InxGa1-xN quantum well structure

Coquillat, D.; Torres, J.; Le Vassor d'Yerville, M.; Legros, R.; Lascaray, J. P.; Liu, C.; Watson, I. M.; Martin, R. W.; Chong, H. M. H.; De La Rue, R. M.

Physica status solidi. A, Applications and materials science, March 2005, Volume: 202, Issue: 4

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Angular‐dependent reflection measurements were used to map out the dispersion relations of the resonant Bloch modes, and the angular dispersion of the phonon modes, in a photonic crystal consisting of selectively grown GaN pyramids containing a single InxGa1–xN/GaN quantum well. The dispersion of the photons exhibits strong photonic crystal characteristics, while the mean indium content of the ∼2 nm thickness InxGa1–xN layer was extracted from the angular dispersion of the phonon modes. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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