E-resources
Peer reviewed
Open access
-
Plantier, L.; Le Friec, Y.; Humbert, A.; Imbert, G.; Sabouret, E.; Sardo, M.; Girault, V.; Delille, D.; Jullian, S.; Junker, K.
Microelectronic engineering, 11/2006, Volume: 83, Issue: 11Journal Article, Conference Proceeding
The formation of a copper silicide interfacial layer by surface reaction in a plasma enhanced chemical vapour deposition (PECVD) system has been studied. Tri-methyl silane (TMS, SiH(CH 3) 3) has been employed as the Si source as an alternative to more conventional silane (SiH 4) approach. TMS precursor has been chosen due to improved control of Si penetration into the copper S. Chhun, L.G. Gosset, N. Casanova, J.F. Guillaumond, P. Dumont-Girard, X. Fedespiel, R. Pantel, V. Arnal, L. Arnaud, J. Torres, Microelectronic Engineering 76 (2004) 106–112. AFM, SIMS, light scattering, FT-IR spectroscopy and dielectric constant measurements were performed on various stacks to evaluate CuSiN formation. Resistance, leakage, and electromigration (EM) reliability characterization were performed on test structures based on 65 nm design rules. Nitridation step in silicidation process was shown to have positive impact on EM reliability, minimizing the line resistance increase.
Author
![loading ... loading ...](themes/default/img/ajax-loading.gif)
Shelf entry
Permalink
- URL:
Impact factor
Access to the JCR database is permitted only to users from Slovenia. Your current IP address is not on the list of IP addresses with access permission, and authentication with the relevant AAI accout is required.
Year | Impact factor | Edition | Category | Classification | ||||
---|---|---|---|---|---|---|---|---|
JCR | SNIP | JCR | SNIP | JCR | SNIP | JCR | SNIP |
Select the library membership card:
If the library membership card is not in the list,
add a new one.
DRS, in which the journal is indexed
Database name | Field | Year |
---|
Links to authors' personal bibliographies | Links to information on researchers in the SICRIS system |
---|
Source: Personal bibliographies
and: SICRIS
The material is available in full text. If you wish to order the material anyway, click the Continue button.