E-resources
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Chiu, C. J.; Shih, S. S.; Wen-Yin Weng; Shoou-Jinn Chang; Hung, Z. D.; Tsung-Ying Tsai
IEEE photonics technology letters, 2012-June15,, Volume: 24, Issue: 12Journal Article
The authors report the fabrication of a deep-ultraviolet sensitive a-ZITO thin-film-transistor (TFT) with a Ta 2 O 5 gate dielectric. It is found that carrier mobility, threshold voltage, and sub-threshold swing are 106.2 cm 2 /Vs, 0.75 V, and 0.45 V/decade, respectively, measured in the dark. It is also found that measured current increased from 2.3 × 10 -9 A to 7.97 × 10 -5 A, as we illuminated the sample with λ = 250-nm UV light when V G is biased at 0 V. Furthermore, it is found that deep-UV-to-visible rejection ratio could reach 2.3 × 10 5 for the fabricated Ta 2 O 5 /a-ZITO TFT.
