E-resources
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Titus, W.; Shifrin, M.; Asparin, V.; Bedard, B.
IEEE 1996 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers, 1996Conference Proceeding
A silicon BiCMOS transceiver front-end consisting of a low noise amplifier, power amplifier, and SPDT switch is described. The chip runs off a 5 V supply and requires a single CMOS/TTL control line for switch control. The LNA path has a 22 dB gain and 4 dB noise figure at 900 MHz. The PA has a gain of 22 dB and an output power of 15 dBm. The SPDT switch has an insertion loss of 1.3 dB, and an isolation of 22 dB at 900 MHz.
