E-resources
-
Deguet, C.; Morales, C.; Dechamp, J.; Hartmann, J.M.; Charvet, A.M.; Moriceau, H.; Chieux, F.; Beaumont, A.; Clavelier, L.; Loup, V.; Kernevez, N.; Raskin, G.; Richtarch, C.; Allibert, F.; Letertre, F.; Mazure, C.
2004 IEEE International SOI Conference (IEEE Cat. No.04CH37573), 2004Conference Proceeding
This paper discusses on the development of germanium-on-insulator (GeOI) structures made by using the smart cut technology, in the preparation of the donor wafer and on the Ge epi development. Thin single crystal layers of Ge 001 have been successfully transferred via oxide to oxide bonding or by Ge to oxide bonding, onto 100 mm and 200 mm Si substrates. The surface roughness of the wafers has been measured by AFM. The surface roughness originating from the splitting step is eliminated by a soft polishing step using a CMP.
