E-resources
Peer reviewed
-
Romanjek, K.; Andrieu, F.; Ernst, T.; Ghibaudo, G.
IEEE electron device letters, 08/2004, Volume: 25, Issue: 8Journal Article
The feasibility of split capacitance-voltage (C-V) measurements in sub-0.1 μm Si MOSFETs is demonstrated. Based on the split C-V measurements, an improved methodology to extract accurately the effective channel length and the effective mobility is proposed. Unlike conventional I/sub d/(V/sub g/)-based extraction techniques, this new approach does not assume the invariance of the effective mobility with gate length (assumption proved to be false in this paper). This method is relevant to study transport limitations in ultimate MOSFETs as illustrated with the study of pocket implant influence on 50-nm p-MOSFETs.
Shelf entry
Permalink
- URL:
Impact factor
Access to the JCR database is permitted only to users from Slovenia. Your current IP address is not on the list of IP addresses with access permission, and authentication with the relevant AAI accout is required.
Year | Impact factor | Edition | Category | Classification | ||||
---|---|---|---|---|---|---|---|---|
JCR | SNIP | JCR | SNIP | JCR | SNIP | JCR | SNIP |
Select the library membership card:
If the library membership card is not in the list,
add a new one.
DRS, in which the journal is indexed
Database name | Field | Year |
---|
Links to authors' personal bibliographies | Links to information on researchers in the SICRIS system |
---|
Source: Personal bibliographies
and: SICRIS
The material is available in full text. If you wish to order the material anyway, click the Continue button.