A lateral trench SiC MOSFET with lateral conduction on the side walls was designed using an ultra-narrowbody (UNB) sandwiched by the trench walls. The p-body is designed to be very narrow in order to avoid any depletion region formed in its body. The structure is similar to a FinFET, but applied to a SiC device. The body width in the channel region of the fabricated UNB MOSFET was 55 nm. The drain current of the UNB and conventional MOSFET were 1.27 μA and 0. 11μA, respectively, at V_{D S}=30 V. The UNB structure presented a significant increase in the mobility, reaching values of over 200cm 2 /Vs. The result indicated a very prominent FinFET effect, resulting in very high mobility and hence very significant improvement in the channel resistance of SiC MOSFETs.