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Zhang, Jianhua; Dong, Panpan; Gao, Yana; Sheng, Chenhang; Li, Xifeng
ACS applied materials & interfaces, 11/2015, Volume: 7, Issue: 43Journal Article
In this article, we reported the stacked structure zinc–indium-tin oxide (ZITO) thin-film transistors (TFTs) with graphene nanosheets (GNSs) prepared by solution process. GNSs were used as bridge layer between dual-ZITO layers. The transmission of stacked ZITO/GNSs/ZITO films are more than 80% in the visible region and the resistivity of ZITO films with GNSs bridge layer decreased from 502.9 to 13.4 Ω cm. The solution-processed TFT devices with GNSs bridge layer exhibited a desirable characteristic with a subthreshold slope of 0.25 V/dec and current on–off ratio of 1 × 107, and the saturation filed effect mobility is improved to 45.9 cm2V–1s–1, which exceeds the mobility values of the pristine ZITO TFTs by one order. These results demonstrate the solution-processed ZITO/GNSs/ZITO TFTs maybe make a further step to achieve high-performance TFTs and show the potential for next-generation applications.
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