Modeling the generation current due to donor-acceptor twins in silicon p-n junctions

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Modeling the generation current due to donor-acceptor twins in silicon p-n junctions

Cerofolini, G.F.; Polignano, M.L.; Savoini, E.; Vanzi, M.

IEEE transactions on electron devices, 01/1985, Volume: 32, Issue: 3

Journal Article

The experimental static current-voltage I-V characteristics of almost ideal silicon p-n junctions are not adequately described by the classic Sah-Noyce-Shockley theory. The I-V characteristics are accurately modeled by admitting the presence of a new class of defects in addition to Shockley-Read-Hall generation-recombination centers. The new center, modeled as a donor-acceptor twin, behaves as a pure generation center.

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Cerofolini, G.F. | Polignano, M.L. | Savoini, E. | Vanzi, M.

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