Electron paramagnetic resonance spectra of interface defects in nitric oxide treated Si/SiO2

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Electron paramagnetic resonance spectra of interface defects in nitric oxide treated Si/SiO2

VON BARDELEBEN, H. J; CANTIN, J. L; GOSSET, L. G; GANEM, J. J; TRIMAILLE, I; RIGO, S

Journal of non-crystalline solids, 04/1999, Volume: 245, Issue: 1-3

Conference Proceeding, Journal Article

The effect of post-oxidation treatments in nitric oxide (NO) on the interface defects in (100) Si/SiO2 is studied by EPR spectroscopy and nuclear analysis techniques. Results show that the interface structure is modified due to a self-limiting, localized incorporation of NO at the interface. The modified interface has an intrinsic interface defect density of less than or equal to 10 sup11 cm sup-2. NO thermal treatments open the possibility for the growth of H-free low defect density Si/SiO2 structures. 22 refs.

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