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Lee, Jae-Hyun; Lee, Eun Kyung; Joo, Won-Jae; Jang, Yamujin; Kim, Byung-Sung; Lim, Jae Young; Choi, Soon-Hyung; Ahn, Sung Joon; Ahn, Joung Real; Park, Min-Ho; Yang, Cheol-Woong; Choi, Byoung Lyong; Hwang, Sung-Woo; Whang, Dongmok
Science (American Association for the Advancement of Science), 04/2014, Volume: 344, Issue: 6181Journal Article
The uniform growth of single-crystal graphene over wafer-scale areas remains a challenge in the commercial-level manufacturability of various electronic, photonic, mechanical, and other devices based on graphene. Here, we describe wafer-scale growth of wrinkle-free single-crystal monolayer graphene on silicon wafer using a hydrogen-terminated germanium buffer layer. The anisotropic twofold symmetry of the germanium (110) surface allowed unidirectional alignment of multiple seeds, which were merged to uniform single-crystal graphene with predefined orientation. Furthermore, the weak interaction between graphene and underlying hydrogen-terminated germanium surface enabled the facile etch-free dry transfer of graphene and the recycling of the germanium substrate for continual graphene growth.
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