E-resources
-
He, J. B.; Chen, D.; Zhu, W. L.; Zhang, S.; Zhao, L. X.; Ren, Z. A.; Chen, G. F.
Physical review. B, 05/2017, Volume: 95, Issue: 19Journal Article
We report the magnetoresistance (MR), Hall effect, and de Haas–van Alphen (dHvA) effect studies of single crystals of tungsten carbide, WC, which is predicted to be a new type of topological semimetal with triply degenerate nodes. With the magnetic field rotated in the plane perpendicular to the current, WC shows a field induced metal-to-insulator-like transition and large nonsaturating quadratic MR at low temperatures. As the magnetic field parallel to the current, a pronounced negative longitudinal MR only can be observed for a certain direction of current flow. The Hall effect indicates WC is a perfect compensated semimetal, which may be related to the large nonsaturating quadratic MR. The analysis of dHvA oscillations reveals that WC is a multiband system with small cross-sectional areas of Fermi surface and light cyclotron effective masses. Our results indicate that WC is an ideal platform to study the recently proposed “new fermions” with triply degenerate crossing points.
![loading ... loading ...](themes/default/img/ajax-loading.gif)
Shelf entry
Permalink
- URL:
Impact factor
Access to the JCR database is permitted only to users from Slovenia. Your current IP address is not on the list of IP addresses with access permission, and authentication with the relevant AAI accout is required.
Year | Impact factor | Edition | Category | Classification | ||||
---|---|---|---|---|---|---|---|---|
JCR | SNIP | JCR | SNIP | JCR | SNIP | JCR | SNIP |
Select the library membership card:
If the library membership card is not in the list,
add a new one.
DRS, in which the journal is indexed
Database name | Field | Year |
---|
Links to authors' personal bibliographies | Links to information on researchers in the SICRIS system |
---|
Source: Personal bibliographies
and: SICRIS
The material is available in full text. If you wish to order the material anyway, click the Continue button.