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Maisi, V F; Hofmann, A; Röösli, M; Basset, J; Reichl, C; Wegscheider, W; Ihn, T; Ensslin, K
Physical review letters, 2016-Apr-01, Volume: 116, Issue: 13Journal Article
We utilize electron counting techniques to distinguish a spin-conserving fast tunneling process and a slower process involving spin flips in AlGaAs/GaAs-based double quantum dots. By studying the dependence of the rates on the interdot tunnel coupling of the two dots, we find that as many as 4% of the tunneling events occur with a spin flip related to spin-orbit coupling in GaAs. Our measurement has a fidelity of 99% in terms of resolving whether a tunneling event occurred with a spin flip or not.
