High‐Performance Nanostructured Flexible Capacitor by Plasma‐Induced Low‐Temperature Atomic Layer Annealing (Adv. Mater. Technol. 1/2023)

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High‐Performance Nanostructured Flexible Capacitor by Plasma‐Induced Low‐Temperature Atomic Layer Annealing (Adv. Mater. Technol. 1/2023)

Lee, Jaehyeong; Go, Dohyun; Lee, Useung; Lee, Seunghyeon; Kim, Keun Hoi; Shin, Jeong Woo; Kim, Hyein; Ok, Jong G.; An, Jihwan

Advanced materials technologies, January 10, 2023, Volume: 8, Issue: 1

Journal Article

Atomic Layer Annealing In article number 2201134, Jong G. Ok, Jihwan An, and co‐workers demonstrate simple yet effective two‐fold strategies to directly fabricate flexible thin film capacitors on polymer substrate: the crystallization of high‐k TiO2 film by plasma‐assisted atomic layer annealing at low temperature of 80 °C on nanostructured polycarbonate substrates fabricated by simple dynamic nanoinscribing technique, which results in the flexible capacitor of the record‐high capacitance density (24.2 nF/mm2) with mechanical stability.

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