E-resources
Peer reviewed
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Inoue, Y.; Nagasawa, H.; Sone, N.; Ishino, K.; Ishida, A.; Fujiyasu, H.; Kim, J.J.; Makino, H.; Yao, T.; Sakakibara, S.; Kuwabara, M.
Journal of crystal growth, 04/2004, Volume: 265, Issue: 1Journal Article
Short period AlN/GaN quantum cascade (QC) laser structures that utilize a polarization field for electron injection were fabricated by hot wall epitaxy. A (GaN) n /(AlN) 1 short period superlattice with several molecular layers of AlN was designed in order to realize a mid-infrared laser. The QC structures were analyzed by X-ray diffraction (XRD) measurements, atomic force microscopy and cross-sectional transmission electron microscopy observation. The XRD patterns and cross-sectional TEM images showed that a well-controlled quantum cascade structure could be prepared by hot wall epitaxy without inter-diffusion of the layers.
