Defect-induced graphitisation in diamond implanted with light ions

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Defect-induced graphitisation in diamond implanted with light ions

Gippius, A.A.; Khmelnitsky, R.A.; Dravin, V.A.; Khomich, A.V.

Physica. B, Condensed matter, 12/2001, Volume: 308

Journal Article

Optical absorption, interference and microscopy studies of diamond samples implanted with light ions (H +, D + and He +) and annealed at various regimes revealed new features of irradiation induced graphitisation of diamond: the “low temperature” graphitisation directly related to vacancies, the specific mechanism of graphitisation accompanied by blistering in H + implanted samples and high temperature graphitisation stimulated by residual radiation damage.

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Gippius, A.A. | Khmelnitsky, R.A. | Dravin, V.A. | Khomich, A.V.

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