Using X-ray diffraction (XRD) and small angle X-ray scattering (SAXS), we probed the nanostructural features of several PECVD grown nc-Si:H thin films with varying crystalline volume fraction. XRD results of a mixed phase film, 70% a-Si:H and 30% c-Si:H, show these crystallites have a preferred 220 orientation in the growth direction. Another film with approximately 90% c-Si also shows elongated grains, but with a preferred 111 orientation. The SAXS results also show an increase in scattering intensity when compared to the mixed phase material. In the mixed phase material, models show that the electron density fluctuations between the amorphous and crystalline phases are not enough to explain the measured SAXS scattering. Hydrogen clustered at the crystallite boundaries and in void regions of the a-Si phase must be included as well. ► Increasing the number of crystallites creates a distinct change in nanostructure. ► XRD shows crystallite preferred orientation changes from 220 to 111. ► SAXS intensity increases with increasing crystallinity.