High Electron Mobility and Ambipolar Transport in Organic Thin-Film Transistors Based on a π-Stacking Quinoidal Terthiophene

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High Electron Mobility and Ambipolar Transport in Organic Thin-Film Transistors Based on a π-Stacking Quinoidal Terthiophene

Chesterfield, R.J.; Newman, C.R.; Pappenfus, T.M.; Ewbank, P.C.; Haukaas, M.H.; Mann, K.R.; Miller, L.L.; Frisbie, C.D.

Advanced materials (Weinheim), 08/2003, Volume: 15, Issue: 15

Journal Article

Thin‐film transistors (TFTs) based on a new n‐channel organic semiconductor (DCMT; see Figure) are reported. An electron mobility as high as 0.2 cm2/V s was observed, as well as ambipolar TFT behavior. Variable temperature measurements reveal that electron conduction is activated, with a small activation energy of 35 ± 10 meV. These results demonstrate that quinoidal oligothiophenes are a promising new class of organic semiconductors for TFTs.

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