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Gippius, A.A.; Khmelnitsky, R.A.; Dravin, V.A.; Khomich, A.V.
Diamond and related materials, 03/2003, Volume: 12, Issue: 3Journal Article
Optical absorption, interference and microscopy studies of diamond samples implanted with light ions (H +, D + and He +) and annealed at various regimes revealed new features of irradiation-induced graphitisation of diamond: ‘low temperature’ graphitisation related to vacancies and the specific mechanism of graphitisation accompanied by blistering in H +-implanted samples. Migration of radiation damage is discussed in relation to the stability of the graphitised layers.
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