GaAs FET large-signal model and its application to circuit designs

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GaAs FET large-signal model and its application to circuit designs

Tajima, Y.; Wrona, B.; Mishima, K.

IEEE transactions on electron devices, 02/1981, Volume: 28, Issue: 2

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A large-signal GaAs FET model is derived based on dc characteristics of the device. Analytical expressions of modeled nonlinear elements are presented in a form convenient for circuit design. Power saturation and gain characteristics of a GaAs FET are studied theoretically and experimentally. An oscillator design employing the large-signal model is demonstrated.

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