The electrical properties of semiconductor materials have conventionally been extracted via Hall measurements performed at a single magnetic field. When applied to a semiconductor such as HgCdTe with mixed conduction characteristics, the values obtained from the Hall measurement represent only an averaged contribution of all carriers present in the sample. In this study, the transport properties of a liquid-phase epitaxially (LPE) grown p-type HgCdTe were determined. Variable magnetic field and temperature Hall and resistivity measurements were employed in conjunction with the improved-quantitative mobility spectrum analysis (iQMSA) algorithm to extract the concentrations and mobilities of all carriers present in the material. A comparison study was made between a van der Pauw Greek cross and a standard Hall bar structure on the same material. A disparity in the transport property of the sample was observed when both structures were measured within a few days of each other. Through iQMSA analysis, the discrepancy is seen to be attributed to the formation of an n-type skin inversion layer within a week after processing.