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Chhun, S.; Gosset, L.G.; Michelon, J.; Girault, V.; Vitiello, J.; Hopstaken, M.; Courtas, S.; Debauche, C.; Bancken, P.H.L.; Gaillard, N.; Bryce, G.; Juhel, M.; Pinzelli, L.; Guillan, J.; Gras, R.; Van Schravendijk, B.; Dupuy, J.-C.; Torres, J.
Microelectronic engineering, 11/2006, Volume: 83, Issue: 11Journal Article, Conference Proceeding
Self-aligned barriers are widely investigated either in replacement of dielectric liners to decrease the total interconnect k value or as a treatment prior standard dielectric barrier deposition to improve reliability performances. In this paper, a technique based on the modification of the Cu surface is proposed. It consists first in removing native Cu oxide, then, enriching Cu surface with Si atoms followed by a nitridation step to complete the so called CuSiN self-aligned barrier. The dependency of Cu surface silicidation on Cu crystallographic orientation is described, evidencing two silicidation mechanisms: Si interstitial incorporation into Cu and Cu atoms substitution by Si atoms. He diluted in H 2 cleaning plasma prior to silicidation is demonstrated both to decrease Cu grain surface ability to silicidation compared H 2 plasma and to limit Si incorporation into Cu at grain boundaries. Compared to a standard SiCN barrier, CuSiN self-aligned barriers integrated as a treatment prior to SiCN evidenced at least four times longer lifetime under electromigration tests.
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