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Han, Sang-Hyun; Baek, Seung-Hye; Lee, Hyun-Jin; Kim, Hyunsoo; Lee, Sung-Nam
Scientific reports, 11/2018, Volume: 8, Issue: 1Journal Article
III-nitride semiconductor-based light-emitting diodes (LEDs) have superior physical properties such as high thermal stability and brightness, for application to solid-state lighting sources. With the commercialization of GaN-based LEDs, improving LED reliability is important because they can be affected by electrostatic discharge, reverse leakage, and breakdown. However, research on the reverse bias characteristics of GaN-based LEDs is insufficient. We studied the reverse breakdown mechanism and demonstrated that a local breakdown can form a conductive channel in GaN-based LEDs, which can be expanded to a novel planar-type LED structure without an n-contact electrode. Furthermore, we found that this approach can be applied to AC-controllable light-emitting devices without any AC-DC converter.
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