This paper presents reliability investigations on specific CMOS transistors for image sensors applications. Reliability tests under sunlight illumination show an ageing effect of the transistors. It ...is shown that the degradation of the transfer gate structure is linked to a modulation of the conduction path. Modification of the channel position influences the interaction between carriers in the channel and oxide traps next to the interface. The evolution of the 1/f noise performances of the transfer gate transistor is studied. The distinctiveness of the noise variation with different stress conditions is thoroughly discussed and the mechanisms at the origin of these phenomena are explained.
The ratio of the total exclusive production cross sections for
η' and
η mesons has been measured in the
pp reaction at
p
beam=3.67 GeV/
c. The observed
η
′/
η ratio is (0.83±0.11
+0.23
−0.18)×10
−2 ...from which the exclusive
η
′ meson production cross section is determined to be (1.12±0.15
+0.42
−0.31) μb. Differential cross section distributions have been measured. Their shape is consistent with isotropic
η
′ meson production.
Low-frequency noise is for the first time investigated in 0.12 μm Partially Depleted (PD) Silicon-On-Insulator (SOI) N-MOSFETs in comparison with established results on the 0.25 μm SOI CMOS ...technology node. The transfer and output characteristics of the devices are first addressed as well as an evaluation of the static performances. Then, we present low-frequency noise measurements carried out in both linear and saturation regimes taking into consideration the usually admitted 1/
f noise models in MOS devices and their applicability in our case. A comparison is achieved with previously published results on 0.25 μm PD SOI N-MOSFETs, showing the drain current noise spectral densities, as well as the Kink-related excess noise occurring in the saturation regime.
Influences of contact thickness on bottom-contact and bottom-gate coplanar organic transistors are studied. In transistors with poor-quality pentacene films, thick contacts improve mobility and lower ...contact resistance. However, in transistors with high-quality pentacene films, thick contacts significantly degrade performance by disrupting molecular self-organization at the contact edge. These results highlight the importance of contact thickness to such organic transistors and reveal that semiconductor morphology should be considered in designing devices with minimal contact effects.
The reverse short channel effect (RSCE) is a major issue for deep-submicron CMOS technologies. In this paper, the RSCE is studied over a wide range of temperature (from 300 K down to 30 K). It is ...shown that the temperature lowering results in a significant reduction of the RSCE. Moreover, we show using these low temperature experiments that the RSCE arises from an excess doping concentration near the source and drain as supported from both analytical modeling and two-dimensional (2-D) numerical simulation.
Analytical models are proposed for thin- and ultra-thin film silicon-on-insulator (SOI) MOSFETs operating in weak or strong inversion. The models take into account all the device parameters. The ...cases of two and three interfaces with a silicon substrate are considered in the modeling and compared with one another. These models give the main electrical MOSFET parameters in ohmic operation (subthreshold swing and threshold voltage) for these structures. The basic approximation is the consideration of a linearly varying potential in the Si film, which has been inferred on the basis of numerical simulations. Various behaviors depending on the Si film and the buried insulator thickness as well as the interface charges, Si film doping, or substrate regime are simulated to assess the properties and the performances of SOI MOS transistors and to validate the analytical models.< >
In this paper, low-frequency noise (LFN) in N- and P-channel dynamic-threshold (DT) MOSFETs on Unibond substrate (SOI) is thoroughly investigated and, especially, an improved formulation of classical ...McWhorter’s noise model is proposed. In order to confirm our approach, an experimental comparison between body tied and DTMOS on SOI substrate has been achieved in terms of LFN behaviour. Furthermore, two different types of DTMOS transistors have been used: with and without current limiter. The LFN in DTMOS is analysed in ohmic and saturation regimes and the impact of the use of a current limiter (clamping transistor) is thoroughly analysed. An explanation based on floating body effect inducing excess noise is also proposed.
Self-heating effects are investigated from room down to near liquid helium temperatures in fully depleted
N channel thin film SIMOX MOS devices. In addition, a simple theoretical analysis of the ...self-heating effect is conducted. A procedure for the determination of the thermal resistance and the device temperature rise directly from the static output characteristics is derived. In order to validate this approach, direct self-heating transient measurements are also carried out.
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