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zadetkov: 108
1.
  • Versatile Configuration and... Versatile Configuration and Control Framework for Real-Time Data Acquisition Systems
    Karcher, N.; Gebauer, R.; Bauknecht, R. ... IEEE transactions on nuclear science, 08/2021, Letnik: 68, Številka: 8
    Journal Article
    Recenzirano
    Odprti dostop

    Modern physics experiments often utilize field-programmable gate array (FPGA)-based systems for real-time data acquisition (DAQ). Integrated analog electronics demand for complex calibration ...
Celotno besedilo

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2.
  • Transparent optical packet ... Transparent optical packet switching: the European ACTS KEOPS project approach
    Guillemot, C.; Renaud, M.; Gambini, P. ... Journal of lightwave technology, 12/1998, Letnik: 16, Številka: 12
    Journal Article
    Recenzirano

    This paper reviews the work carried out under the European ACTS KEOPS (KEys to Optical Packet Switching) project, centering on the definition, development and assessment of optical packet switching ...
Celotno besedilo
3.
  • Versatile Multifiber Optica... Versatile Multifiber Optical Connectivity Solution: From Concept to Realization
    Kunde, J.; Bauknecht, R.; Krahenbuhl, R. ... Journal of lightwave technology, 02/2007, Letnik: 25, Številka: 2
    Journal Article
    Recenzirano

    Multifiber interconnection technology is one of the important keys to increase package density in optical networks. We present a novel releasable multifiber optical connectivity solution from the ...
Celotno besedilo
4.
  • Compact 90 ^ Releasable Mul... Compact 90 ^ Releasable Multifiber Optical Connectivity Solution
    Krahenbuhl, R.; Kunde, J.; Pliska, A.-C. ... IEEE photonics technology letters, 04/2007, Letnik: 19, Številka: 8
    Journal Article

    A compact releasable 90deg optical connectivity solution is proposed, realized, and characterized. It can be used for angled interconnection between two small form factor multifiber connectors, or ...
Celotno besedilo
5.
  • InP-InGaAs single HBT techn... InP-InGaAs single HBT technology for photoreceiver OEIC's at 40 Gb/s and beyond
    Huber, D.; Bauknecht, R.; Bergamaschi, C. ... Journal of lightwave technology, 07/2000, Letnik: 18, Številka: 7
    Journal Article
    Recenzirano

    We describe an advanced InP-InGaAs-based technology for the monolithic integration of pin-photodiodes and SHBT-transistors. Both devices are processed using the same epitaxial grown layer structure. ...
Celotno besedilo
6.
  • Monolithic InGaAs-InP p-i-n... Monolithic InGaAs-InP p-i-n/HBT 40-Gb/s optical receiver module
    Bitter, M.; Bauknecht, R.; Hunziker, W. ... IEEE photonics technology letters, 2000-Jan., 2000-01-00, 20000101, Letnik: 12, Številka: 1
    Journal Article

    A fully packaged 40-Gb/s optical receiver module based on monolithic integration of p-i-n photodiodes and single-heterojunction bipolar transistors (HBT) in the InGaAs-InP material system is ...
Celotno besedilo
7.
  • Influence of process parame... Influence of process parameters and bump geometry on the residual stress distribution in a chip-on-foil bonding process
    Suter, P.; Bauknecht, R.; Graf, T. ... 2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual, 2005
    Conference Proceeding

    A chip-on-foil inner-lead bonding process for display driver circuits was analyzed by means of finite-element simulation and experimental validation. The developed model allowed the calculation of ...
Celotno besedilo
8.
  • Compact 90 super( degree ) ... Compact 90 super( degree ) Releasable Multifiber Optical Connectivity Solution
    Krahenbuhl, R; Kunde, J; Pliska, A-C ... IEEE photonics technology letters, 01/2007, Letnik: 19, Številka: 8
    Journal Article

    A compact releasable 90deg optical connectivity solution is proposed, realized, and characterized. It can be used for angled interconnection between two small form factor multifiber connectors, or ...
Celotno besedilo
9.
  • InP/InGaAs double HBTs with... InP/InGaAs double HBTs with high CW power density at 10 GHz
    Bauknecht, R.; Melchior, H. Conference Proceedings. 1997 International Conference on Indium Phosphide and Related Materials, 1997
    Conference Proceeding

    High-performance InP/InGaAs double HBTs operating in common-emitter mode with 7.5 W/mm output power density at 10 GHz are reported. A total output power of 600 mW was achieved with five-finger cells ...
Celotno besedilo
10.
  • LP-MOVPE growth of DHBT str... LP-MOVPE growth of DHBT structure with heavily Zn-doped base and suppressed outdiffusion
    Gini, E.; Bauknecht, R.; Rohner, M. ... Conference Proceedings. 2000 International Conference on Indium Phosphide and Related Materials (Cat. No.00CH37107), 2000
    Conference Proceeding

    Low pressure MOVPE growth of layer structures for high performance double hetero bipolar transistors (DHBT) is presented. A very high zinc base doping level of 3.5/spl times/10/sup 19//cm/sup 3/ was ...
Celotno besedilo
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zadetkov: 108

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