Radiation damage of SiPMs Garutti, E.; Musienko, Yu
Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment,
05/2019, Letnik:
926
Journal Article
Recenzirano
Odprti dostop
The current understanding of radiation tolerance of Silicon Photomultipliers (SiPMs) is reviewed. Radiation damage in silicon sensors is briefly introduced, surface and bulk effects are separately ...addressed. Results on the operation of irradiated SiPMs with X-ray, gamma, electron, proton and neutron sources are presented. The most critical effect of radiation on SiPMs is the increase of dark count rate, which makes it impossible to resolve signals generated by a single photon from the noise. Methods to characterize irradiated SiPMs after their single photo-electron resolution is lost are discussed. Due to the important similarity in the operation below the breakdown voltage, studies on radiation damage of avalanche photo-diodes (APD) are also reviewed. Finally, ideas are presented on how to approach the development of radiation hard SiPMs in the future.
In this work, the effects of 60Co γ-ray irradiation on high resistivity p-type diodes have been investigated. The diodes were exposed to dose values of 0.1, 0.2, 1, and 2MGy. Both macroscopic (I–V, ...C–V) and microscopic investigations, by means of Thermally Stimulated Current (TSC) and Deep Level Transient Spectroscopy (DLTS) techniques, were conducted to characterize the radiation-induced changes. The investigated diodes were manufactured on high resistivity p-type Float Zone (FZ) silicon and were further classified into two types based on the isolation technique between the pad and guard ring: p-stop and p-spray. After irradiation, the macroscopic results of current–voltage and capacitance–voltage measurements were obtained and compared with existing literature data. Additionally, the microscopic measurements focused on the development of the concentration of different radiation-induced defects, including the Boron interstitial-Oxygen interstitial (BiOi) complex, the Carbon interstitial-Oxygen interstitial (CiOi) defect, the H40K, and the so-called IP∗.
To investigate the thermal stability of induced defects in the bulk, isochronal annealing studies were performed in the temperature range of 100°C to 300°C. These annealing processes were carried out on diodes irradiated with doses of 1 and 2MGy. Furthermore, in order to investigate the unexpected results observed in the C–V measurements after irradiation with high dose values, the surface conductance between the pad and guard ring was measured as a function of both dose and annealing temperature.
In this work, the thermally stimulated current (TSC) technique has been used to investigate the properties of the radiation-induced interstitial boron and interstitial oxygen defect complex by 23-GeV ...(<inline-formula> <tex-math notation="LaTeX">E_{\text {kin}} </tex-math></inline-formula>) protons, including activation energy, defect concentration, as well as the annealing behavior. At first isothermal annealing (at 80 °C for 0-180 min) followed by isochronal annealing (for 15 min between 100 °C and 190 °C in steps of 10 °C), studies had been performed in order to get information about the thermal stability of the interstitial boron and interstitial oxygen defect in 50-<inline-formula> <tex-math notation="LaTeX">\Omega </tex-math></inline-formula>cm material after irradiation with 23-GeV protons to a fluence of <inline-formula> <tex-math notation="LaTeX">6.91\times 10^{13}\,\,{\text {p/cm}^{2}} </tex-math></inline-formula>. The results are presented and discussed. Furthermore, the extracted data from TSC measurements are compared with the macroscopic properties derived from current-voltage and capacitance-voltage characteristics. In addition, the introduction rate of interstitial boron and interstitial oxygen defect as a function of the initial doping concentration was determined by exposing diodes with different resistivities (10, 50, 250, and 2 <inline-formula> <tex-math notation="LaTeX">\text{k}\Omega </tex-math></inline-formula>cm) to 23-GeV protons. These results are compared with data from TSC and deep-level transient spectroscopy measurements achieved by the team of the CERN-RD50 "Acceptor removal project."
Time of flight (TOF) measurements in positron emission tomography (PET) are very challenging in terms of timing performance, and should ideally achieve less than 100 ps FWHM precision. We present a ...time-based differential technique to read out silicon photomultipliers (SiPMs) which has less than 20 ps FWHM electronic jitter. The novel readout is a fast front end circuit (NINO) based on a first stage differential current mode amplifier with 20 Ω input resistance. Therefore the amplifier inputs are connected differentially to the SiPM's anode and cathode ports. The leading edge of the output signal provides the time information, while the trailing edge provides the energy information. Based on a Monte Carlo photon-generation model, HSPICE simulations were run with a 3 × 3 mm 2 SiPM-model, read out with a differential current amplifier. The results of these simulations are presented here and compared with experimental data obtained with a 3 × 3 × 15 mm 3 LSO crystal coupled to a SiPM. The measured time coincidence precision and the limitations in the overall timing accuracy are interpreted using Monte Carlo/SPICE simulation, Poisson statistics, and geometric effects of the crystal.
Status report on silicon photomultiplier development and its applications Dolgoshein, B.; Balagura, V.; Buzhan, P. ...
Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment,
07/2006, Letnik:
563, Številka:
2
Journal Article
Recenzirano
Odprti dostop
The state of art of the Silicon Photomultipliers (SiPM's)—their features, possibilities and applications—is given. The significant progress of this novel technique of photo detection is described and ...discussed.
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