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  • Forming-free, fast, uniform... Forming-free, fast, uniform, and high endurance resistive switching from cryogenic to high temperatures in W/AlOx/Al2O3/Pt bilayer memristor
    Huang, Xiao-Di; Li, Yi; Li, Hao-Yang ... IEEE electron device letters, 04/2020, Letnik: 41, Številka: 4
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    Through oxygen profile engineering, we fabricated W/AlOx/Al2O3/Pt bilayer memristors with a 250-nm feature size. The AlOx fabricated by sputtering serves as an oxygen vacancy source, whereas the ...
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  • Interfacial engineering of ... Interfacial engineering of worm-shaped palladium nanocrystals anchored on polyelectrolyte-modified MXene nanosheets for highly efficient methanol oxidation
    Xiao, Di; Jiang, Quanguo; Xu, Chenyu ... Journal of colloid and interface science, 06/2022, Letnik: 616
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    A convenient interfacial engineering strategy is developed to the construction of worm-shaped palladium nanocrystals strongly coupled with polyelectrolyte-modified Ti3C2Tx MXene via direct ...
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  • Giant tunneling magnetoresi... Giant tunneling magnetoresistance in spin-filter van der Waals heterostructures
    Song, Tiancheng; Cai, Xinghan; Tu, Matisse Wei-Yuan ... Science (American Association for the Advancement of Science), 06/2018, Letnik: 360, Številka: 6394
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    Magnetic multilayer devices that exploit magnetoresistance are the backbone of magnetic sensing and data storage technologies. Here, we report multiple-spin-filter magnetic tunnel junctions (sf-MTJs) ...
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  • Valley Manipulation by Opti... Valley Manipulation by Optically Tuning the Magnetic Proximity Effect in WSe2/CrI3 Heterostructures
    Seyler, Kyle L; Zhong, Ding; Huang, Bevin ... Nano letters, 06/2018, Letnik: 18, Številka: 6
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    Monolayer valley semiconductors, such as tungsten diselenide (WSe2), possess valley pseudospin degrees of freedom that are optically addressable but degenerate in energy. Lifting the energy ...
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