The electronic fuel injection system is the most common fuel supply systems in vehicles today. Whereas the fuel pump is one of the key components in the electronic fuel injection system. Once the ...fuel pump is out of service, the engine will stop operating immediately. However, it does not have an effective method to evaluate the lifetime of a using fuel pump. To increase the reliability of the electronic fuel injection system, this paper proposed a novel vehicle fuel pump early warning system using on-board diagnostic (OBD) data. The proposed system makes use of vehicle speed as well as revolutions per minute (rpm) of engine to calculate the fuel pump runtime parameters. Then one can determine the remained lifetime of the fuel pump and give an early warning indicator to user when its remained lifetime is to be close to zero. The proposed system has commercial potential in the field of vehicle repair service application.
We investigated that Al/Ba(Zr sub(0.1)Ti sub(0.9))O sub(3) (BZT)/insulator-Silicon metal-ferroelectric-semiconductor (MFIS) and Al/BZT/Pt/Ti/SiO sub(2)/Silicon metal-ferroelectric-metal-insu- ...lator-semiconductor (MFMIS) ferroelectric structures and investigated the memory effect and dielectric constant with different insulator materials of thin films in the MFIS and MFMIS. The BZT thin films on SiO sub(2)/Si substrates show good capacitance-voltage characteristics and the threshold voltage shift of 20 V at applied plus or minus 30 V bias. However, the leakage current density of BZT on SiO sub(2)/Si at 0.5 MV/cm is two orders of magnitude lower than that on Si sub(x)N sub(y). The clockwise hysteresis loops in C-V curves of the MFIS structure were also observed clearly. From the dependence of C-V properties on different insulator materials, it is deduced that hysteresis loop dominated by the ion vacancy, defect and trap charges in the Si sub(x)N sub(y) films.
Using RF magnetron sputtering technique, the (Ba sub(0.7)Sr sub(0.3))(Ti sub(0.9)Zr sub(0.1))O sub(3) and (Ba sub(0.8)Sr sub(0.2))(Ti sub(0.9)Zr sub(0.1))O sub(3) thin films were successfully ...deposited and annealed on the Pt/Ti/SiO sub(2)/Silicon substrates, and their electrical and physical characteristics had been investigated and presented. The dielectric constant and leakage current density of as-deposited (Ba sub(0.7)Sr sub(0.3))(Ti sub(0.9)Zr sub(0.1))O sub(3) thin films were obtained under optimal sputtering parameters. Additionally, the maximum dielectric constant and leakage current density of annealed BSTZ films under the rapid temperature annealing and conventional furnace annealing would be increased, as the temperature increased to 700 degree C. Further, the maximum remnant polarization and coercive field of (Ba sub(0.8)Sr sub(0.2))(Ti sub(0.9)Zr sub(0.1))O sub(3) films were found and calculated from the P-E curves. Finally, for obtaining larger storage capacity and higher density of dynamic random access memory devices in the future, the experimental results indicated the correlation between the electrical characteristics and as-deposited/annealed BSTZ thin films under different post-treatment process.
Using RF magnetron sputter method, ferroelectric 0.95(Na...Bi...)TiO...-0.05BaTiO... + 1wt% Bi2O3 (NBT-BT3) thin films were deposited on SiO.../Si and Pt/Ti/SiO.../Si substrates. The as-deposited ...films were crystallizes by a conventional thermal annealing (CTA) process conducted in air at temperatures 600...C for 60 min. The large memory window and stable leakage current density were measured by C-V and I-V method. Besides, the ferroelectric properties of the annealed NBT-BT3 thin films were also investigated. Furthermore, the transfer characteristics of one-transistor-capacitor (1TC) type FeRAM devices with bottom gate structure using NBT-BT3 gate oxide had been develop and discussed. (ProQuest: ... denotes formulae/symbols omitted.)
Using RF magnetron sputtering technique, the (...)(...)O... and (...)(...)O... thin films were successfully deposited and annealed on the Pt/Ti/SiO.../Silicon substrates, and their electrical and ...physical characteristics had been investigated and presented. The dielectric constant and leakage current density of as-deposited (...)(...)O... thin films were obtained under optimal sputtering parameters. Additionally, the maximum dielectric constant and leakage current density of annealed BSTZ films under the rapid temperature annealing and conventional furnace annealing would be increased, as the temperature increased to 700°C. Further, the maximum remnant polarization and coercive field of (...)(...)O... films were found and calculated from the P-E curves. Finally, for obtaining larger storage capacity and higher density of dynamic random access memory devices in the future, the experimental results indicated the correlation between the electrical characteristics and as-deposited/annealed BSTZ thin films under different post-treatment process. (ProQuest: ... denotes formulae/symbols omitted.)
Using RF magnetron sputter method, ferroelectric 0.95(Na
0.5
Bi
0.5
)TiO
3
-0.05BaTiO
3
+ 1wt% Bi
2
O
3
(NBT-BT3) thin films were deposited on SiO
2
/Si and Pt/Ti/SiO
2
/Si substrates. The ...as-deposited films were crystallizes by a conventional thermal annealing (CTA) process conducted in air at temperatures 600°C for 60 min. The large memory window and stable leakage current density were measured by C-V and I-V method. Besides, the ferroelectric properties of the annealed NBT-BT3 thin films were also investigated. Furthermore, the transfer characteristics of one-transistor-capacitor (1TC) type FeRAM devices with bottom gate structure using NBT-BT3 gate oxide had been develop and discussed.
Using RF magnetron sputter method, ferroelectric 0.95(Na sub(0.5)Bi sub(0.5))TiO sub(3)-0.05BaTiO sub(3) + 1wt% Bi sub(2)O sub(3) (NBT-BT3) thin films were deposited on SiO sub(2)/Si and Pt/Ti/SiO ...sub(2)/Si substrates. The as-deposited films were crystallizes by a conventional thermal annealing (CTA) process conducted in air at temperatures 600 degree C for 60 min. The large memory window and stable leakage current density were measured by C-V and I-V method. Besides, the ferroelectric properties of the annealed NBT-BT3 thin films were also investigated. Furthermore, the transfer characteristics of one-transistor-capacitor (1TC) type FeRAM devices with bottom gate structure using NBT-BT3 gate oxide had been develop and discussed.
To improve the piezoelectric and ageing properties of lead-free Li0.06(K0.48Na0.52)0.94(Nb0.86Ta0.08Sb0.06)O3 piezoceramics, the conventional solid-state reaction method was compared with the B-side ...pre-calcined method. The physical and electrical properties of Li0.06(K0.48Na0.52)0.94(Nb0.86Ta0.08Sb0.06)O3 piezoceramics were investigated. For the B-side pre-calcined method, the ceramics exhibited excellent electrical and piezoelectric parameters. Finally, the electromechanical coupling factors, resonant frequencies, and resonant resistances of the lead-free ceramics are also discussed.
