Monolayer molybdenum disulfide (MoS2) is an atomically thin semiconducting material with a direct band gap. This physical property is attributable to atomically thin optical devices such as sensors, ...light-emitting devices, and photovoltaic cells. Recently, a near-unity photoluminescence (PL) quantum yield of a monolayer MoS2 was demonstrated via a treatment with a molecular acid, bis(trifluoromethane)sulfonimide (TFSI); however, the mechanism still remains a mystery. Here, we work on PL enhancement of monolayer MoS2 by treatment of Brønsted acids (TFSI and sulfuric acid (H2SO4)) to identify the importance of the protonated environment. In TFSI as an acid, different solvents1,2-dichloroethane (DCE), acetonitrile, and waterwere studied, as they show quite different acidity in solution. All of the solvents showed PL enhancement, and the highest was observed in DCE. This behavior in DCE would be due to the higher acidity than others have. Acids from different anions can also be studied in water as a common solvent. Both TFSI and H2SO4 showed similar PL enhancement (∼4–8 enhancement) at the same proton concentration, indicating that the proton is a key factor to enhance the PL intensity. Finally, we considered another cation, Li+ from Li2SO4, instead of H2SO4, in water. Although Li and H atoms showed similar binding energy on MoS2 from theoretical calculations, Li2SO4 treatment showed little PL enhancement; only coexisting H2SO4 reproduced the enhancement. This study demonstrated the importance of a protonated environment to increase the PL intensity of monolayer MoS2. The study will lead to a solution to achieve high optical quality and to implementation for atomically thin optical devices.
We report visible light and X-ray imagers on lightweight and mechanically flexible plastic substrates. The process involves solution processing of organic photodetectors on top of an active-matrix ...backplane consisting of carbon nanotube thin-film transistors. The system takes advantage of the high mobility of nanotube transistors for low operating voltages and efficient light absorption of organic bulk-heterojunctions for high imaging sensitivity. With this highly scalable process scheme, 18 × 18 pixel-array flexible imagers (physical size of 2 cm × 1.5 cm) with high performance are successfully demonstrated. In addition, as the absorption peak of the adopted organic photodiodes covers the green band of the light spectrum, X-ray imaging is readily demonstrated by placing a scintillator film on top of the flexible imagers.
To advance the development of atomically thin optoelectronics using two-dimensional (2D) materials, engineering strong luminescence with a physicochemical basis is crucial. Semiconducting monolayer ...transition-metal dichalcogenides (TMDCs) are candidates for this, but their quantum yield (QY) is known to be poor. Recently, a molecular superacid treatment of bis(trifluoromethane)sulfonimide (TFSI) generated unambiguously bright monolayer TMDCs and a high QY. However, this method is highly dependent on the processing conditions and therefore has not been generalized. Here, we shed light on environmental factors to activate the photoluminescence (PL) intensity of the TFSI-treated monolayer MoS2, with a factor of more than 2 orders of magnitude greater than the original by photoactivation. The method is useful for both mechanically exfoliated and chemically deposited samples. The existence of photoirradiation larger than the band gap demonstrates enhancement of the PL of MoS2; on the other hand, activation by thermal annealing, as demonstrated in the previous report, is less effective for enhancing the PL intensity. The photoactivated monolayer MoS2 shows a long lifetime of ∼1.35 ns, more than a 30-fold improvement over the original as exfoliated. The consistent realization of the bright monolayer MoS2 reveals that air exposure is an essential factor in the process. TFSI treatment in a N2 environment was not effective for achieving a strong PL, even after the photoactivation. These findings can serve as a basis for engineering the bright atomically thin materials for 2D optoelectronics.
Due to the direct band gap nature, extensive studies have been conducted to improve the optical behavior in monolayer transition metal dichalcogenides (TMDCs) with a formula of MX2 (M = Mo, W; X = S, ...Se, Te). One of the strongest modulating agents of optical behavior is a molecular superacid treatment; however, the chemical event has not been unveiled. Also, the engineering protocol for keeping the treatment is immature. In this work, we systematically study the superacid treatment procedures on monolayer molybdenum disulfide (MoS2) and propose that the interaction, a hydrophilic interaction, between the superacid molecule and MoS2 surface would be critical. As a result of the interaction, the superacid molecules spontaneously form an acidic layer with the thickness of several nanometers on the surface. The power-dependent photoluminescence (PL) measurement indicates the edge of MoS2 flake is more effective and electronically modulated by the treatment. By understanding the superacid nanolayer formation by the treatment, we succeeded in maintaining the ultrastrong PL in the superacid-treated MoS2 for more than 30 days in the ambient air by encapsulation with transparent organic polymers. This study advances the understanding and designing applications of strong luminescent properties in the superacid-treated TMDCs and paves the way toward engineering exciton dynamics and an experimental platform for treating multibody states.
Carrier modulation in transition-metal dichalcogenides (TMDCs) is of importance for applying electronic devices to tune their transport properties and controlling phases, including metallic to ...superconductivity. Although the surface charge transfer doping method has shown a strong modulation ability of the electronic structures in TMDCs and a degenerately doped state has been proposed, the details of the electronic states have not been elucidated, and this transport behavior should show a considerable thickness dependence in TMDCs. In this study, we characterize the metallic transport behavior in the monolayer and multilayer MoS2 under surface charge transfer doping with a strong electron dopant, benzyl viologen (BV) molecules. The metallic behavior transforms to an insulative state under a negative gate voltage. Consequently, metal–insulator transition (MIT) was observed in both monolayer and multilayer MoS2 correlating with the critical conductivity of order e 2/h. In the multilayer case, the BV molecules strongly modulated the topmost surface layer in the bulk MoS2; the transfer characteristics suggested a crossover from a heterogeneously doped state with a doped topmost layer to doping in the deep layers caused by the variation in the gate voltage. The findings of this work will be useful for understanding the device characteristics of thin-layered materials and for applying them to the controlling phases via carrier modulation.
Controlled assembly of single-walled carbon nanotube (SWCNT) networks with high density and deposition rate is critical for many practical applications, including large-area electronics. In this ...regard, surfactant chemistry plays a critical role as it facilitates the substrate–nanotube interactions. Despite its importance, detailed understanding of the subject up until now has been lacking, especially toward tuning the controllability of SWCNT assembly for thin-film transistors. Here, we explore SWCNT assembly with steroid- and alkyl-based surfactants. While steroid-based surfactants yield highly dense nanotube thin films, alkyl surfactants are found to prohibit nanotube assembly. The latter is attributed to the formation of packed alkyl layers of residual surfactants on the substrate surface, which subsequently repel surfactant encapsulated SWCNTs. In addition, temperature is found to enhance the nanotube deposition rate and density. Using this knowledge, we demonstrate highly dense and rapid assembly with an effective SWCNT surface coverage of ∼99% as characterized by capacitance–voltage measurements. The scalability of the process is demonstrated through a roll-to-roll assembly of SWCNTs on plastic substrates for large-area thin-film transistors. The work presents an important process scheme for nanomanufacturing of SWCNT-based electronics.
Abstract
Superacids are strong acids with an acidity higher than pure sulfuric acid. Recently, superacid treatment of monolayer transition metal dichalcogenide (TMDC) flakes, such as MoS
2
and WS
2
, ...has shown a dramatic enhancement of optical properties, such as photoluminescence (PL) intensity. The superacid molecule is bis(trifluoromethane)sulfonimide (TFSI). In this review paper, we summarize and discuss the recent works and the current understanding of the TFSI treatment, and finally, we describe the outlook of the treatment on monolayer TMDCs.
There is great interest in developing a low-power gas sensing technology that can sensitively and selectively quantify the chemical composition of a target atmosphere. Nanomaterials have emerged as ...extremely promising candidates for this technology due to their inherent low-dimensional nature and high surface-to-volume ratio. Among these, nanoscale silicon is of great interest because pristine silicon is largely inert on its own in the context of gas sensing, unless functionalized with an appropriate gas-sensitive material. We report a chemical-sensitive field-effect transistor (CS-FET) platform based on 3.5-nm-thin silicon channel transistors. Using industry-compatible processing techniques, the conventional electrically active gate stack is replaced by an ultrathin chemical-sensitive layer that is electrically nonconducting and coupled to the 3.5-nm-thin silicon channel. We demonstrate a low-power, sensitive, and selective multiplexed gas sensing technology using this platform by detecting H
S, H
, and NO
at room temperature for environment, health, and safety in the oil and gas industry, offering significant advantages over existing technology. Moreover, the system described here can be readily integrated with mobile electronics for distributed sensor networks in environmental pollution mapping and personal air-quality monitors.
Modulating the electronic structure of semiconducting materials is critical to developing high-performance electronic and optical devices. Transition metal dichalcogenides (TMDCs) are atomically thin ...semiconducting materials. However, before they can be used successfully in electronic and optical devices, modulation of their carrier concentration at the nanometer scale must be achieved. Molecular doping has been successful in modulating the carrier concentration; however, the scientific approach for selective and local carrier doping at the nanometer scale is still missing. Here, we demonstrate a proof-of-concept of modulating the carrier concentration of TMDCs laterally on a scale of around 100 nm using spontaneous pattern formation of an ultrathin film consisting of molecular electron dopants. When the water made contact with the molecular film (∼10 nm), a spontaneous pattern formation was observed on both the monolayer and bulk TMDCs. We revealed that the pattern-formation dynamics and nanoscopic flow rate of the molecules were highly dependent on the thickness of the TMDCs, since the band gap varies based on the number of layers. Analyses of topographic images of the molecular patterns and photoluminescence spectra of the TMDCs indicated that the spontaneously patterned molecular films induced a local carrier doping. Our results demonstrate a spontaneous formation of a mosaic electronic structure. This work is useful for making tiny-scale electronic junctions on TMDCs and semiconducting materials to make numerous p/n junctions simultaneously for optoelectronic devices.
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