Since the emergence of optical fiber communications, lithium niobate (LN) has been the material of choice for electro-optic modulators, featuring high data bandwidth and excellent signal fidelity. ...Conventional LN modulators however are bulky, expensive and power hungry, and cannot meet the growing demand in modern optical data links. Chip-scale, highly integrated, LN modulators could offer solutions to this problem, yet the fabrication of low-loss devices in LN thin films has been challenging. Here we overcome this hurdle and demonstrate monolithically integrated LN electro-optic modulators that are significantly smaller and more efficient than traditional bulk LN devices, while preserving LN's excellent material properties. Our compact LN electro-optic platform consists of low-loss nanoscale LN waveguides, micro-ring resonators and miniaturized Mach-Zehnder interferometers, fabricated by directly shaping LN thin films into sub-wavelength structures. The efficient confinement of both optical and microwave fields at the nanoscale dramatically improves the device performances featuring a half-wave electro-optic modulation efficiency of 1.8 V∙cm while operating at data rates up to 40 Gbps. Our monolithic LN nanophotonic platform enables dense integration of high-performance active components, opening new avenues for future high-speed, low power and cost-effective communication networks.
Phonons are considered to be universal quantum transducers due to their ability to couple to a wide variety of quantum systems. Among these systems, solid-state point defect spins are known for being ...long-lived optically accessible quantum memories. Recently, it has been shown that inversion-symmetric defects in diamond, such as the negatively charged silicon vacancy center (SiV), feature spin qubits that are highly susceptible to strain. Here, we leverage this strain response to achieve coherent and low-power acoustic control of a single SiV spin, and perform acoustically driven Ramsey interferometry of a single spin. Our results demonstrate an efficient method of spin control for these systems, offering a path towards strong spin-phonon coupling and phonon-mediated hybrid quantum systems.
We formulate and exploit a computational inverse-design method based on topology optimization to demonstrate photonic crystal structures supporting complex spectral degeneracies. In particular, we ...discover photonic crystals exhibiting third-order Dirac points formed by the accidental degeneracy of monopolar, dipolar, and quadrupolar modes. We show that, under suitable conditions, these modes can coalesce and form a third-order exceptional point, leading to strong modifications in the spontaneous emission (SE) of emitters, related to the local density of states. We find that SE can be enhanced by a factor of 8 in passive structures, with larger enhancements ∼sqrtn^{3} possible at exceptional points of higher order n.
Owing to its attractive optical and electronic properties, silicon carbide is an emerging platform for integrated photonics. However an integral component of the platform is missing-an electro-optic ...modulator, a device which encodes electrical signals onto light. As a non-centrosymmetric crystal, silicon carbide exhibits the Pockels effect, yet a modulator has not been realized since the discovery of this effect more than three decades ago. Here we design, fabricate, and demonstrate a Pockels modulator in silicon carbide. Specifically, we realize a waveguide-integrated, small form-factor, gigahertz-bandwidth modulator that operates using complementary metal-oxide-semiconductor (CMOS)-level voltages on a thin film of silicon carbide on insulator. Our device is fabricated using a CMOS foundry compatible fabrication process and features no signal degradation, no presence of photorefractive effects, and stable operation at high optical intensities (913 kW/mm
), allowing for high optical signal-to-noise ratios for modern communications. Our work unites Pockels electro-optics with a CMOS foundry compatible platform in silicon carbide.
Electro-optic modulators (EOMs) convert signals from the electrical to the optical domain. They are at the heart of optical communication, microwave signal processing, sensing, and quantum ...technologies. Next-generation EOMs require high-density integration, low cost, and high performance simultaneously, which are difficult to achieve with established integrated photonics platforms. Thin-film lithium niobate (LN) has recently emerged as a strong contender owing to its high intrinsic electro-optic (EO) efficiency, industry-proven performance, robustness, and, importantly, the rapid development of scalable fabrication techniques. The thin-film LN platform inherits nearly all the material advantages from the legacy bulk LN devices and amplifies them with a smaller footprint, wider bandwidths, and lower power consumption. Since the first adoption of commercial thin-film LN wafers only a few years ago, the overall performance of thin-film LN modulators is already comparable with, if not exceeding, the performance of the best alternatives based on mature platforms such as silicon and indium phosphide, which have benefited from many decades of research and development. In this mini-review, we explain the principles and technical advances that have enabled state-of-the-art LN modulator demonstrations. We discuss several approaches, their advantages and challenges. We also outline the paths to follow if LN modulators are to improve further, and we provide a perspective on what we believe their performance could become in the future. Finally, as the integrated LN modulator is a key subcomponent of more complex photonic functionalities, we look forward to exciting opportunities for larger-scale LN EO circuits beyond single components.
Quantum emitters are an integral component for a broad range of quantum technologies, including quantum communication, quantum repeaters, and linear optical quantum computation. Solid-state color ...centers are promising candidates for scalable quantum optics due to their long coherence time and small inhomogeneous broadening. However, once excited, color centers often decay through phonon-assisted processes, limiting the efficiency of single-photon generation and photon-mediated entanglement generation. Herein, we demonstrate strong enhancement of spontaneous emission rate of a single silicon-vacancy center in diamond embedded within a monolithic optical cavity, reaching a regime in which the excited-state lifetime is dominated by spontaneous emission into the cavity mode. We observe 10-fold lifetime reduction and 42-fold enhancement in emission intensity when the cavity is tuned into resonance with the optical transition of a single silicon-vacancy center, corresponding to 90% of the excited-state energy decay occurring through spontaneous emission into the cavity mode. We also demonstrate the largest coupling strength (g/2π = 4.9 ± 0.3 GHz) and cooperativity (C = 1.4) to date for color-center-based cavity quantum electrodynamics systems, bringing the system closer to the strong coupling regime.
Integrated thin-film lithium niobate platform has recently emerged as a promising candidate for next-generation, high-efficiency wavelength conversion systems that allow dense packaging and ...mass-production. Here we demonstrate efficient, phase-matched second harmonic generation in lithographically-defined thin-film lithium niobate waveguides with sub-micron dimensions. Both modal phase matching in fixed-width waveguides and quasi-phase matching in periodically grooved waveguides are theoretically proposed and experimentally demonstrated. Our low-loss (~3.0 dB/cm) nanowaveguides possess normalized conversion efficiencies as high as 41% W
cm
.
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