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zadetkov: 216
1.
  • Impact of Thickness Control... Impact of Thickness Control of Hf0.5Zr0.5O2 Films for the Metal-Ferroelectric-Insulator-Semiconductor Capacitors
    Min, Dae-Hong; Kang, Seung Youl; Moon, Seung-Eon ... IEEE electron device letters, 2019-July, Letnik: 40, Številka: 7
    Journal Article
    Recenzirano

    Effects of controlling the film thickness of ferroelectric Hf 0.5 Zr 0.5 O 2 (HZO) thin film were investigated to figure out the important design strategies for the ...
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2.
  • Film thickness-dependent fe... Film thickness-dependent ferroelectric polarization switching dynamics of undoped HfO2 thin films prepared by atomic layer deposition
    Choi, Se-Na; Moon, Seung-Eon; Yoon, Sung-Min Ceramics international, 12/2019, Letnik: 45, Številka: 17
    Journal Article
    Recenzirano

    Metal-ferroelectric-metal capacitors were fabricated to evaluate the ferroelectricity and switching dynamics of the undoped-HfO2 thin films prepared by atomic layer deposition. The film thickness was ...
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3.
  • SnO2 Nanoslab as NO2 Sensor... SnO2 Nanoslab as NO2 Sensor: Identification of the NO2 Sensing Mechanism on a SnO2 Surface
    Maeng, Sunglyul; Kim, Sang-Woo; Lee, Deuk-Hee ... ACS applied materials & interfaces, 01/2014, Letnik: 6, Številka: 1
    Journal Article
    Recenzirano
    Odprti dostop

    Among the various metal oxides, SnO2 has been most widely exploited as a semiconductor gas sensor for its excellent functionalities. Models illustrating the sensing mechanism of SnO2 have been ...
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4.
  • Artificial Perspiration Mem... Artificial Perspiration Membrane by Programmed Deformation of Thermoresponsive Hydrogels
    Kim, Junsoo; Im, Solyee; Kim, Jeong Hun ... Advanced materials (Weinheim), 02/2020, Letnik: 32, Številka: 6
    Journal Article
    Recenzirano

    Thermal management is essential for living organisms and electronic devices to survive and maintain their own functions. However, developing flexible cooling devices for flexible electronics or ...
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5.
  • Ultrasensitive and Highly S... Ultrasensitive and Highly Stretchable Multiple-Crosslinked Ionic Hydrogel Sensors with Long-Term Stability
    Yu, Jin-Young; Moon, Seung Eon; Kim, Jeong Hun ... Nano-micro letters, 12/2023, Letnik: 15, Številka: 1
    Journal Article
    Recenzirano
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    Highlights A multiple-crosslinked poly(2-(methacryloyloxy)ethyl)dimethyl-(3-sulfopropyl)ammonium hydroxide-co-acrylamide multifunctional hydrogel was prepared via a one-pot synthesis method. The ...
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6.
  • Improvement in Long-Term an... Improvement in Long-Term and High-Temperature Retention Stability of Ferroelectric Field-Effect Memory Transistors With Metal-Ferroelectric-Metal-Insulator-Semiconductor Gate-Stacks Using Al-Doped HfO2 Thin Films
    Yoon, So-Jung; Min, Dae-Hong; Moon, Seung-Eon ... IEEE transactions on electron devices, 02/2020, Letnik: 67, Številka: 2
    Journal Article
    Recenzirano

    Nonvolatile memory characteristics of the ferroelectric field-effect transistors (FeFETs) were investigated by introducing the metal-ferroelectric-metal-insulator-semiconductor (MFMIS) gate-stacks, ...
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7.
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8.
  • Wafer-Level-Based Open-Circ... Wafer-Level-Based Open-Circuit Sensitivity Model from Theoretical ALEM and Empirical OSCM Parameters for a Capacitive MEMS Acoustic Sensor
    Lee, Jaewoo; Im, Jong-Pil; Kim, Jeong-Hun ... Sensors, 01/2019, Letnik: 19, Številka: 3
    Journal Article
    Recenzirano
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    We present a simple, accurate open-circuit sensitivity model based on both analytically calculated lumped and empirically extracted lumped-parameters that enables a capacitive acoustic sensor to be ...
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9.
  • Dysfunctional adipocytes pr... Dysfunctional adipocytes promote tumor progression through YAP/TAZ-dependent cancer-associated adipocyte transformation
    Song, Yaechan; Na, Heeju; Lee, Seung Eon ... Nature communications, 05/2024, Letnik: 15, Številka: 1
    Journal Article
    Recenzirano
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    Obesity has emerged as a prominent risk factor for the development of malignant tumors. However, the existing literature on the role of adipocytes in the tumor microenvironment (TME) to elucidate the ...
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10.
  • Device Feasibility of Ferro... Device Feasibility of Ferroelectric Field‐Effect Transistors Using Al‐Doped HfO2 Gate Insulator Deposited with H2O Oxygen Precursor during Atomic Layer Deposition Process
    Kim, Jin-Ju; Yoon, So-Jung; Kim, Yeriaron ... Physica status solidi. A, Applications and materials science, 20/May , Letnik: 218, Številka: 10
    Journal Article
    Recenzirano

    Metal–ferroelectric–metal (MFM) capacitors with Pt‐/Al‐doped HfO2 (Al:HfO2)/TiN structures are characterized to demonstrate the ferroelectricity of the Al:HfO2 thin films deposited by atomic layer ...
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zadetkov: 216

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