Non-destructive testing (NDT) techniques are most commonly employed for detection and characterization of flaws in the component. Apart from flaw characteristics, another parameter which is equally ...important to assess the structural integrity of engineering components is the material property. Nondestructive testing techniques offer several advantages over the conventional coupon-based techniques. Ultrasonic Testing is one of the widely used NDT techniques for material characterization. In this paper flaw detection such as lack of fusion and slag of welding carbonized steel and stainless steel material is characterized using discrete wavelet transform (DWT).In order to categorize the type of flaws, the given ultrasonic signal is subjected into DWT decomposition. Then, energy is calculated from DWT approximation coefficient. Finally corresponding welding flaw is determined using computed energy.
This project's main aim is to detect unbalancing in three phase circuit. We further provide a software simulation in MATLAB to provide solution to this problem. This MATLAB simulation works with ...self-adapting intelligent agent system that would plot real time unbalancing and balancing of the system. In a balance system all phases, of a three phase power system are distributed at 120° in space with respect to each other. In "three phase four wire" systems, no current flows through neutral wire if system is balanced 1. We have also shown that how by dividing the areas into sub servers of Java we can decrease the inconsistency and remove the discrepancies in the whole system thus tackling these uncontrolled conditions of unbalancing.
In this paper, a novel device structure Gate-Inside Organic Field Effect Transistors (GI-OFET) for Organic Field Effect Transistor (OFET) has been proposed. An analytical model for the proposed OFET ...structure has been developed. This analytical modeling is based on the device physics and contact resistance of the proposed device. This innovative structure shows significant performance enhancement in terms of the larger drive current Id , Ion /Ioff ratio, reduced threshold voltage Vth , enhanced transconductance gm , reduced subthreshold slope SS over top contact bottom gate structure of OFET. The developed model holds good for both linear and saturation regions. GIOFET shows considerable improvement over the top contact bottom gate structure of OFET because of its larger gate electrostatic control on the device operation. Hence, GI-OFET has potential to replace the conventional OFET structures.
