A compact model of the low-field effective carrier mobility is developed for n- and p-type MOSFETs with either polySi or TiN gate, ultrathin SiO 2 /HfO 2 gate stacks, and silicon under biaxial or ...uniaxial stress conditions. Physical insights, theoretical analyses and experimental investigations are used to develop and accurately calibrate the model.
Thirty-six patients with Peyronie's disease were evaluated with diagnostic sonography. Radiographic and/or xeroradiographic examinations were also performed on 23 patients. Sonography could ...demonstrate the presence of the plaques characteristic of the disease in the majority of cases (94.5%), whereas only calcified lesions were depicted by conventional X-rays. Sonography is therefore recommended for its well-known advantages over other techniques, not only as the diagnostic methodology of choice, but also in the follow-up of the disease.
We present an advanced Monte Carlo code (SIHOLE90) which is applied to p-Si and includes generation recombination processes from shallow impurity levels, impact ionization from neutral impurities and ...the Poole-Frenkel effect. The very good agreement obtained between calculations and experiments supports the physical reliability of the code which should provide useful information for device modeling.
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