A modulator design based upon anti-crossing between coupled silicon microrings with independent amplitude-phase functionality, is presented. The device has a footprint of 0.003 mm , exhibits over ...10times improvement in modulation sensitivity, and 14 dB extinction.
Moore’s law continues to prescribe ever smaller device dimensions with each new device node. While the new device nodes are scheduled at even pace, the innovation required to obtain commensurate ...device performance is greater with every device node. This increased complexity in the process, while maintaining the momentum of Moore’s law, is increasing the pressure on the development teams to increase the learning rate on new processes and their interactions.
There have been many publications on mix-and-match lithography to enable early learning. In this technique, one whole device level (often the gate definition) is replaced by a different technology (often e-beam), while all the other levels continue to be patterned using traditional optical lithography. Hybrid lithography, by contrast, is the use of different lithography technologies on a single resist level which enables the marriage of both technology’s best properties.
In this work, we present hybrid e-beam direct write and optical lithography, enabling high throughput (optical), high-resolution (EBDW), excellent overlay (EBDW) and fast prototyping (EBDW). We will show how IBM has used hybrid lithography to enable early learning on back end of the line (BEOL) processes and on extremely scaled SRAM cells (0.143
μm
2) D.M. Fried, et al., IEDM Proceedings (2004) 261–264.
We demonstrate undoped-body, gate-all-around (GAA) Si nanowire (NW) MOSFETs with excellent electrostatic scaling. These NW devices, with a TaN/Hf-based gate stack, have high drive-current performance ...with NFET/PFET I DSAT = 825/950 ¿A/¿m (circumference-normalized) or 2592/2985 ¿A/¿m (diameter-normalized) at supply voltage V DD = 1 V and off-current I OFF = 15 nA/¿m. Superior NW uniformity is obtained through the use of a combined hydrogen annealing and oxidation process. Clear scaling of short-channel effects versus NW size is observed.
We perform the first direct capacitance measurements of silicon nanowires (Si-NWs) and the determination of field carrier mobilities (for both electrons and holes) and their NW size dependence in ...undoped-channel Si-NW field-effect transistors (FETs) at room temperature. We use a two-FET method for accurate extraction of the intrinsic channel resistance and capacitance of the Si-NWs. The devices used in this study were fabricated using a top-down method to create Si-NW FETs with up to 1000 wires in parallel for increasing the raw capacitance while maintaining excellent control on device dimensions and series resistance. We then study and compare the NW mobility values with those of the known universal mobility curves for bulk silicon.
We measure signal degradation from interchannel crosstalk of ultrahigh-bandwidth signals in silicon-on-insulator waveguides, and single-channel power penalty over a range of injection powers. The ...results validate the suitability of silicon-based nanowire interconnects for broadband WDM networks.
A 0.143 /spl mu/m/sup 2/ 6T-SRAM cell has been fabricated using a planar SOI technology with mixed electron-beam and optical lithography. This is the smallest functional 6T-SRAM cell ever reported - ...consistent with cell areas beyond the 32 nm technology node. Enabling process features include a 25 nm SOI layer, shallow trench isolation (STI), 45 nm physical gates with ultra-narrow 15 nm spacers, novel extremely thin cobalt disilicide, 50 nm tungsten plug contacts, and damascene copper interconnects. Device threshold voltages (V/sub T/) and cell beta ratio (/spl beta/) are optimized for cell stability at these aggressive ground rules. The 0.143 /spl mu/m/sup 2/ 6T-SRAM cell exhibits a static noise margin (SNM) of 148 mV at V/sup DD/=1.0 V.
We will review the latest results on development of submicron silicon-on-insulator waveguiding structures - photonic crystals and single-mode strip waveguides (photonic wires)
We have measured the dissipation and frequency of nanocrystalline-diamond
nanomechanical resonators with resonant frequencies between 13.7 MHz and 157.3
MHz, over a temperature range of 1.4-274 K. ...Using both magnetomotive network
analysis and a novel time-domain ring-down technique, we have found the
dissipation in this material to have a temperature dependence roughly following
T^0.2, with Q^-1 = 10^-4 at low temperatures. The frequency dependence of a
large dissipation feature at ~35-55 K is consistent with thermal activation
over a 0.02 eV barrier with an attempt frequency of 10 GHz.
