Throughout the decades of continuous advances in semiconductor technology, from the discrete devices of the late 1950s to today's billon-transistor system-on-chip, there have always been concerns ...about the ability of components to operate safely in an increasingly disruptive electromagnetic environment. This paper provides a nonexhaustive review of the research work conducted in the field of electromagnetic compatibility (EMC) at the IC level over the past 40 years. It also brings together a collection of information and trends in IC technology, in order to build a tentative roadmap for the EMC of ICs until the year 2020, with a focus on measurement methods and modeling approaches.
The objective of this paper is to propose an improved approach based on a novel non-intrusive method for easily assess the high frequency CW EM radiated susceptibility of an electronic system by ...characterizing its non-linear electromagnetic-effects. For this purpose, we have developed a specific harmonic frequency detection system coupled with a mode stirrer reverberating chamber. We describe the principles of the method, and we study a generic device board which is representative of a real electronic system. We evaluate the EM susceptibility of a micro controller in full functional mode and the data exchanges with two types of external 8Mb SRAM memories. We observe the EM radiated susceptibility of this device by a functional EMC analysis method; then we measure the harmonic frequency content and make a correlation with the EM susceptibility results. We obtain significant differences between the two memory devices, as a consequence of their different management of internal voltage over stress. We are well aware that this method is currently not validated in industrial environments EMC. In this paper, we only wanted to show that the appearance of the highest harmonic level occurs only when that DUT has the highest functional failure.
This paper presents a methodology for building an integrated circuit behavioral model that enables the prediction of its electromagnetic (EM) emissions up to several gigahertz. The model, built upon ...S-parameter characterization and conducted emission measurements, is used to predict the EM emissions of a commercial 16-bit microcontroller. The emission measurements are performed according to several EM compatibility standards, namely, 1 Omega /150 Omega , surface scan, and transverse EM/gigahertz transverse EM (GTEM) method, and their results show an excellent fit with model predictions.
Advances in interconnect technologies, such as the increase in the number of metal layers, stacked vias, and the reduced routing pitch, have played a key role to continuously improve integrated ...circuit design and operating speed. However several parasitic effects jeopardize the benefits of scale-down. Understanding and predicting interconnect behavior is vital for designing high-performance integrated circuit design. Our paper first reviews the interconnect parasitic effects and examines their impact on circuit behavior and their increase due to lithography reduction, with special emphasis on propagation delay, lateral coupling, and crosstalk-induced delay. The problem of signal integrity characterization is then discussed. In our review of the different well-established measurement methodologies such as direct probing, S-parameters, e-beam sampling and on-chip sampling, we point out weaknesses, frequency ranges, drawbacks, and overall performances of these techniques. Subsequently, the on-chip sampling system is described. This features a precise line-domain characterization of the voltage waveform directly within the interconnect and shows its application in the accurate evaluation of propagation delay, crosstalk, and crosstalk-induced delay along interconnects in deep-submicrometer technology. The sensor parts are described in detail, together with signal integrity patterns and their implementation in 0.18-/spl mu/m CMOS technology. Measurements obtained with this technique are presented. In the third part, we discuss the simulation issues, describe the two- and three-dimensional interconnect modeling problems, and review the active device models applicable to deep-submicrometer technologies in order to agree on measurements and simulations. These studies result in a set of guidelines concerning the choice of interconnect models. The last part outlines the design rules to be used by designers and their implementation within computer-aided design (CAD) tools to achieve signal integrity compliance. From a 0.18-/spl mu/m technology are derived critical variables such as crosstalk tolerance margin, maximum coupling length, and the criteria for adding a signal repeater. From these, values for low-dielectric and copper interconnects have been selected.
This paper presents a study of the parasitic emissions of a 0.18-/spl mu/m CMOS experimental integrated circuit (IC) and an accurate method for modeling the internal current switching to forecast ...electromagnetic interference (EMI). The effectiveness of emission reduction techniques is quantified through a set of conducted noise measurements. A simple core model is developed, based on the current switching activity. Added to a lumped-element model of the test board and the package, good agreement between simulation and measurements are obtained up to 10 GHz. The simulation methodology may be applied to forecast the impact of low emission design techniques on the EMI of ICs.
La conception de cellules logique et analogique servant de base à la création de circuits intégrés a évolué graduellement au fil des progrès technologiques. Nous proposons dans cet article une ...synthèse de cette évolution avec une prospective à 10 ans. L’évolution de nos travaux pratiques vers la conception 3nm Nano-Sheet est aussi décrite, basé sur un retour d’expérience de deux promotions. Nous esquissons l’évolution des besoins en enseignement et recherche pour la prochaine décennie, et notre stratégie de mise à disposition de logiciel de conception nano-CMOS implémentant les évolutions majeures associées à chaque génération technologique.
A new multivariate non-parametric regression method is considered, which is an extension of PLS1 regression using the multivariate local polynomial regression framework. A theoretical framework that ...can be used in order to study the asymptotic properties of the estimator is proposed, and the method is implemented on a real data set, made up of seasonal amounts of rainfall in the north of the Nordeste region of Brazil, to be explained by climatic variables. The performances of the three methods of PLS1 regression, multivariate local regression and local PLS1 regression are compared by means of cross-validation and the use of a validation period. All calculations have been implemented in the S-Plus package. The results confirm the good properties of local PLS1 regression.
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