Field-effect transistor (FET) devices composed of a MoS2–graphene heterostructure can combine the advantages of high carrier mobility in graphene with the permanent band gap of MoS2 for digital ...applications. Herein, we investigate the electron transfer, photoluminescence, and gate-controlled carrier transport in such a heterostructure. We show that the junction is a Schottky barrier, whose height can be artificially controlled by gating or doping graphene. When the applied gate voltage (or the doping level) is zero, the photoexcited electron–hole pairs in monolayer MoS2 can be split by the heterojunction, significantly reducing the photoluminescence. By applying negative gate voltage (or p-doping) in graphene, the interlayer impedance formed between MoS2 and graphene exhibits an 100-fold increase. For the first time, we show that the gate-controlled interlayer Schottky impedance can be utilized to modulate carrier transport in graphene, significantly depleting the hole transport, but preserving the electron transport. Accordingly, we demonstrate a new type of FET device, which enables a controllable transition from NMOS digital to bipolar characteristics. In the NMOS digital regime, we report a very high room temperature on/off current ratio (I ON/I OFF ∼ 36) in comparison to graphene-based FET devices without sacrificing the field-effect electron mobilities in graphene. By engineering the source/drain contact area, we further estimate that a higher value of I ON/I OFF up to 100 can be obtained in the device architecture considered. The device architecture presented here may enable semiconducting behavior in graphene for digital and analogue electronics.
The isolation of graphene in 2004 from graphite was a defining moment for the “birth” of a field: two-dimensional (2D) materials. In recent years, there has been a rapidly increasing number of papers ...focusing on non-graphene layered materials, including transition-metal dichalcogenides (TMDs), because of the new properties and applications that emerge upon 2D confinement. Here, we review significant recent advances and important new developments in 2D materials “beyond graphene”. We provide insight into the theoretical modeling and understanding of the van der Waals (vdW) forces that hold together the 2D layers in bulk solids, as well as their excitonic properties and growth morphologies. Additionally, we highlight recent breakthroughs in TMD synthesis and characterization and discuss the newest families of 2D materials, including monoelement 2D materials (i.e., silicene, phosphorene, etc.) and transition metal carbide- and carbon nitride-based MXenes. We then discuss the doping and functionalization of 2D materials beyond graphene that enable device applications, followed by advances in electronic, optoelectronic, and magnetic devices and theory. Finally, we provide perspectives on the future of 2D materials beyond graphene.
Nanoparticles offer clear advantages for both passive and active penetration into biologically important membranes. However, the uptake and localization mechanism of nanoparticles within living ...plants, plant cells, and organelles has yet to be elucidated. Here, we examine the subcellular uptake and kinetic trapping of a wide range of nanoparticles for the first time, using the plant chloroplast as a model system, but validated in vivo in living plants. Confocal visible and near-infrared fluorescent microscopy and single particle tracking of gold-cysteine-AF405 (GNP-Cys-AF405), streptavidin-quantum dot (SA-QD), dextran and poly(acrylic acid) nanoceria, and various polymer-wrapped single-walled carbon nanotubes (SWCNTs), including lipid-PEG-SWCNT, chitosan-SWCNT and 30-base (dAdT) sequence of ssDNA (AT)15 wrapped SWCNTs (hereafter referred to as ss(AT)15-SWCNT), are used to demonstrate that particle size and the magnitude, but not the sign, of the zeta potential are key in determining whether a particle is spontaneously and kinetically trapped within the organelle, despite the negative zeta potential of the envelope. We develop a mathematical model of this lipid exchange envelope and penetration (LEEP) mechanism, which agrees well with observations of this size and zeta potential dependence. The theory predicts a critical particle size below which the mechanism fails at all zeta potentials, explaining why nanoparticles are critical for this process. LEEP constitutes a powerful particulate transport and localization mechanism for nanoparticles within the plant system.
Planar 2D materials are possibly the ideal channel candidates for future field effect transistors (FETs), due to their unique electronic properties. However, the performance of FETs based on 2D ...materials is yet to exceed those of conventional silicon based devices. Here, a 2D channel thin film made from liquid phase exfoliated molybdenum oxide nanoflake inks with highly controllable substoichiometric levels is presented. The ability to induce oxygen vacancies by solar light irradiation in an aqueous environment allows the tuning of electronic properties in 2D substoichiometric molybdenum oxides (MoO3−x). The highest mobility is found to be ≈600 cm2 V−1 s−1 with an estimated free electron concentration of ≈1.6 × 1021 cm−3 and an optimal IOn/IOff ratio of >105 for the FETs made of 2D flakes irradiated for 30 min (x = 0.042). These values are significant and represent a real opportunity to realize the next generation of tunable electronic devices using electronic inks.
Electronic inks of 2D MoO3−x flakes based on a solar light irradiation in liquid‐phase exfoliated method are used for developing channels FETs for future high‐performance printed nanoelectronic devices. It is shown that the carrier concentration, energy band, and carrier charge mobility in 2D MoO3−x‐based FETs can be tuned and the optimal substoichiometric value with the maximum transconductance is obtained.
In the pursuit of two-dimensional (2D) materials beyond graphene, enormous advances have been made in exploring the exciting and useful properties of transition metal dichalcogenides (TMDCs), such as ...a permanent band gap in the visible range and the transition from indirect to direct band gap due to 2D quantum confinement, and their potential for a wide range of device applications. In particular, recent success in the synthesis of seamless monolayer lateral heterostructures of different TMDCs via chemical vapor deposition methods has provided an effective solution to producing an in-plane p–n junction, which is a critical component in electronic and optoelectronic device applications. However, spatial variation of the electronic and optoelectonic properties of the synthesized heterojunction crystals throughout the homogeneous as well as the lateral junction region and the charge carrier transport behavior at their nanoscale junctions with metals remain unaddressed. In this work, we use photocurrent spectral atomic force microscopy to image the current and photocurrent generated between a biased PtIr tip and a monolayer WSe2–MoS2 lateral heterostructure. Current measurements in the dark in both forward and reverse bias reveal an opposite characteristic diode behavior for WSe2 and MoS2, owing to the formation of a Schottky barrier of dissimilar properties. Notably, by changing the polarity and magnitude of the tip voltage applied, pixels that show the photoresponse of the heterostructure are observed to be selectively switched on and off, allowing for the realization of a hyper-resolution array of the switchable photodiode pixels. This experimental approach has significant implications toward the development of novel optoelectronic technologies for regioselective photodetection and imaging at nanoscale resolutions. Comparative 2D Fourier analysis of physical height and current images shows high spatial frequency variations in substrate/MoS2 (or WSe2) contact that exceed the frequencies imposed by the underlying substrates. These results should provide important insights in the design and understanding of electronic and optoelectronic devices based on quantum confined atomically thin 2D lateral heterostructures.
The semiconductor and display manufacturing process requires high precision. Therefore, inside the equipment, fine impurity particles affect the yield rate of production. However, since most ...manufacturing processes are performed under high-vacuum conditions, it is difficult to estimate particle flow with conventional analytical tools. In this study, high-vacuum flow was analyzed using the direct simulation Monte Carlo (DSMC) method, and various forces acting on fine particles in a high-vacuum flow field were calculated. To compute the computationally intensive DSMC method, GPU-based computer unified device architecture (CUDA) technology was used. The force acting on the particles in the high-vacuum rarefied gas region was verified using the results of previous studies, and the results were derived for the difficult-to-experiment region. An ellipsoid shape with an aspect ratio rather than a spherical shape was also analyzed. The change in drag force according to various aspect ratios was analyzed and compared with the results of the spherical shape under the same flow conditions.
Atomically thin MoS2 is of great interest for electronic and optoelectronic applications because of its unique two-dimensional (2D) quantum confinement; however, the scaling of optoelectronic ...properties of MoS2 and its junctions with metals as a function of layer number as well the spatial variation of these properties remain unaddressed. In this work, we use photocurrent spectral atomic force microscopy (PCS-AFM) to image the current (in the dark) and photocurrent (under illumination) generated between a biased PtIr tip and MoS2 nanosheets with thickness ranging between n = 1 to 20 layers. Dark current measurements in both forward and reverse bias reveal characteristic diode behavior well-described by Fowler–Nordheim tunneling with a monolayer barrier energy of 0.61 eV and an effective barrier scaling linearly with layer number. Under illumination at 600 nm, the photocurrent response shows a marked decrease for layers up to n = 4 but increasing thereafter, which we describe using a model that accounts for the linear barrier increase at low n, but increased light absorption at larger n creating a minimum at n = 4. Comparative 2D Fourier analysis of physical height and photocurrent images shows high spatial frequency spatial variations in substrate/MoS2 contact that exceed the frequencies imposed by the underlying substrates. These results should aid in the design and understanding of optoelectronic devices based on quantum confined atomically thin MoS2.
Bubble columns are widely encountered in several industries, especially in the field of nuclear safety. The Eulerian-Eulerian and the Eulerian-Lagrangian methods are commonly used to investigate ...bubble columns. Eulerian approaches require additional tasks such as strict volume conservation at the interface and a predefined well-structured grid. In contrast, the Lagrangian approach can be easily implemented. Hence, we introduce a fully Lagrangian approach for the simulation of bubble columns using the discrete bubble model (DBM) and moving particle semi-implicit (MPS) methods. Additionally, we propose a rigorous method to estimate the volume fraction accurately, and verified it through experimental data and analytical results. The MPS method was compared with the experimental data of Dambreak. The DBM was verified by analyzing the terminal velocity of a single bubble for each bubble size. It agreed with the analytical results for each of the four drag correlations. Additionally, the improved method for calculating the volume fraction showed agreement with the Ergun equation for the pressure drop in a packed bed. The implemented MPS-DBM was used to simulate the bubble column, and the results were compared with the experimental results. We demonstrated that the MPS-DBM was in quantitative agreement with the experimental data.
Bubble columns are widely encountered in several industries, especially in the field of nuclear safety. The Eulerian-Eulerian and the Eulerian-Lagrangian methods are commonly used to investigate ...bubble columns. Eulerian approaches require additional tasks such as strict volume conservation at the interface and a predefined well-structured grid. In contrast, the Lagrangian approach can be easily implemented. Hence, we introduce a fully Lagrangian approach for the simulation of bubble columns using the discrete bubble model (DBM) and moving particle semi-implicit (MPS) methods. Additionally, we propose a rigorous method to estimate the volume fraction accurately, and verified it through experimental data and analytical results. The MPS method was compared with the experimental data of Dambreak. The DBM was verified by analyzing the terminal velocity of a single bubble for each bubble size. It agreed with the analytical results for each of the four drag correlations. Additionally, the improved method for calculating the volume fraction showed agreement with the Ergun equation for the pressure drop in a packed bed. The implemented MPS-DBM was used to simulate the bubble column, and the results were compared with the experimental results. We demonstrated that the MPS-DBM was in quantitative agreement with the experimental data.
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