In small-area MOSFETs widely used in analog and RF circuit design, low-frequency (LF) noise behavior is increasingly dominated by single-electron effects. In this paper, the authors review the ...limitations of current compact noise models which do not model such single-electron effects. The authors present measurement results that illustrate typical LF noise behavior in small-area MOSFETs, and a model based on Shockley-Read-Hall statistics to explain the behavior. Finally, the authors treat practical examples that illustrate the relevance of these effects to analog circuit design. To the analog circuit designer, awareness of these single-electron noise phenomena is crucial if optimal circuits are to be designed, especially since the effects can aid in low-noise circuit design if used properly, while they may be detrimental to performance if inadvertently applied.
This volume provides a new analysis of the Greek traditions with regard to Xerxes' expedition, offering novel views on the naval factors influencing Persian policies, on Persian naval strength, on ...the operations culminating in the battle of Salamis, and on the battle itself.
The examined class of circuits includes voltage multipliers, current multipliers, linear V-I convertors, linear I-V convertors, current squaring circuits, and current divider circuits. Typical for ...these circuits is an independent control of the sum as well as the difference between two gate-source voltages. As direct use is made of the basic device characteristics, only a small number of transistors is required in the presented circuits.
This letter reports the diagnostic power of the low-frequency noise analysis (steady-state and periodic large-signal excitation) in MOSFETs subjected to hot-carrier degradation. The LF noise under ...periodic large-signal excitation is shown to increase more rapidly than the LF noise in steady-state. Moreover the improvement in the LF noise performance due to periodic large-signal excitation, observed for fresh devices, gradually diminishes as the devices are subjected to hot-carrier stress.
This paper presents a transconductor suitable for implementation in submicron CMOS technology. The transconductor is nearly insensitive for the second-order effects of the MOS transistors, which ...become more and more prevalent in today's submicron processes. The transconductor relies on a differential pair with variable degeneration resistance, while the degeneration resistors are "soft-switched" by means of MOS transistors. The transconductance is continuously tunable. A transconductor, using a device in which the degeneration resistors and "soft switches" are merged, is optimized for a maximum tuning range and can be used in variable gain stages like in an automatic gain control (AGC) circuit. Besides, a third-order 5.5 MHz low-pass filter has been realized in a 0.5-/spl mu/m CMOS process using the "soft-switched" transconductor. At a 3.3 V supply voltage the filter dissipates 12 mW and the dynamic range equals 62 dB where the total harmonic distortion (THD) is -48 dB for an input voltage of 1 Vpp.
A new measurement setup is presented that allows the observation of 1/f noise spectra in MOSFET's under switched bias conditions in a wide frequency band (10 Hz-100 kHz). When switching between ...inversion and accumulation, MOSFET's of different manufacturers invariably show reduced 1/f noise power density for frequencies below the switching frequency. At low frequencies (10 Hz), a 5-8 dB reduction in intrinsic 1/f noise power density is found for different devices, largely independent of the switching frequency (up to 1 MHz). The switched bias measurements render detailed wideband 1/f noise spectra of switched MOSFET's, which is useful for 1/f noise model validation and analog circuit design.
This volume deals with Xerxes' invasion of Greece (480 B.C.), particularly as a naval operation. It examines the traditions preserved by Aischylos, Herodotos, and others against the background of the ...revolutionary naval developments in the period preceding Xerxes' decision to attack. Among the subjects discussed are: the naval pressure on Persian foreign policy; the strength in numbers of the Persian navy in 480; its deployment in the waters of Salamis related to the physical features of the battlefield and the position of the Greeks; Themistokles' legendary message as a key to the Persian plan of attack; the quality of the opposing ships and their tactical capabilities; the battle of Salamis itself and its outcome. The book includes maps and a photograph of the area discussed.
Deposited instead of thermally grown oxides were studied to form very high-quality inter-polysilicon dielectric layers for embedded nonvolatile memory application. It was found that by optimizing the ...microstructure, i.e., texture and morphology of the polysilicon layers, and by optimizing the post dielectric deposition anneal, very high-quality dielectric layers can be obtained. In this paper it is shown on simple capacitor structure level and full EEPROM device level that the electrical properties of interpoly dielectric layers can be improved tremendously by using deposited dielectric layers with additional rapid thermal anneal. Typical results are: a high charge-to-breakdown (Q/sub BD//spl ap/25 C/cm/sup 2/), low leakage currents and decreased charge trapping during constant current stress. An additional advantage is the low thermal budget, which is very attractive for embedded applications. However, results depend on the polysilicon preparation, dielectric type and RTP anneal environment. From electrical evaluation it appeared that even for deposited dielectric layers the influence of polysilicon surface roughness and corners is considerable. The optimized combination of flat polysilicon layers, deposited inter-polysilicon dielectric and additional optimized rapid thermal anneal have been applied in full EEPROM devices. Cycling over one million cycles was possible, which indicates an endurance improvement by a factor of 10.
The low-frequency noise power spectrum of small dimension MOSFETs is dominated by Lorentzians arising from random telegraph signals (RTS). The low-frequency noise is observed to decrease when the ...devices are periodically switched 'off'. The technique of determining the statistical lifetimes and amplitudes of the RTS by fitting the signal level histogram of the time-domain record to two-Gaussian histograms has been reported in the literature. This procedure is then used for analysing the 'noisy' RTS along with the device background noise, which turned out to be 1/f noise. The 1/f noise of the device can then be separated from the RTS using this procedure. In this work, RTS observed in MOSFETs, under both constant and switched biased conditions, have been investigated in the time domain, Further, the 1/f noise in both the constant and the switched biased conditions is investigated.
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