Two-terminal memory elements, or memelements, capable of co-locating signal processing and memory via history-dependent reconfigurability at the nanoscale are vital for next-generation computing ...materials striving to match the brain's efficiency and flexible cognitive capabilities. While memory resistors, or memristors, have been widely reported, other types of memelements remain underexplored or undiscovered. Here we report the first example of a volatile, voltage-controlled memcapacitor in which capacitive memory arises from reversible and hysteretic geometrical changes in a lipid bilayer that mimics the composition and structure of biomembranes. We demonstrate that the nonlinear dynamics and memory are governed by two implicitly-coupled, voltage-dependent state variables-membrane radius and thickness. Further, our system is capable of tuneable signal processing and learning via synapse-like, short-term capacitive plasticity. These findings will accelerate the development of low-energy, biomolecular neuromorphic memelements, which, in turn, could also serve as models to study capacitive memory and signal processing in neuronal membranes.
Translating the surging interest in neuromorphic electronic components, such as those based on nonlinearities near Mott transitions, into large‐scale commercial deployment faces steep challenges in ...the current lack of means to identify and design key material parameters. These issues are exemplified by the difficulties in connecting measurable material properties to device behavior via circuit element models. Here, the principle of local activity is used to build a model of VO2/SiN Mott threshold switches by sequentially accounting for constraints from a minimal set of quasistatic and dynamic electrical and high‐spatial‐resolution thermal data obtained via in situ thermoreflectance mapping. By combining independent data sets for devices with varying dimensions, the model is distilled to measurable material properties, and device scaling laws are established. The model can accurately predict electrical and thermal conductivities and capacitances and locally active dynamics (especially persistent spiking self‐oscillations). The systematic procedure by which this model is developed has been a missing link in predictively connecting neuromorphic device behavior with their underlying material properties, and should enable rapid screening of material candidates before employing expensive manufacturing processes and testing procedures.
We investigate the exponential dependence of switching speeds in thin-film memristors for high electric fields and elevated temperatures. An existing nonlinear ionic drift model and our simulation ...results explain the very large ratios for the state lifetime to switching speed experimentally observed in devices for which resistance switching is due to ion migration. Given the activation barriers of the drifting species, it is possible to predict the volatility and switching time for various material systems.
Beyond use as high density non-volatile memories, memristors have potential as synaptic components of neuromorphic systems. We investigated the suitability of tantalum oxide (TaOx) ...transistor-memristor (1T1R) arrays for such applications, particularly the ability to accurately, repeatedly, and rapidly reach arbitrary conductance states. Programming is performed by applying an adaptive pulsed algorithm that utilizes the transistor gate voltage to control the SET switching operation and increase programming speed of the 1T1R cells. We show the capability of programming 64 conductance levels with <0.5% average accuracy using 100 ns pulses and studied the trade-offs between programming speed and programming error. The algorithm is also utilized to program 16 conductance levels on a population of cells in the 1T1R array showing robustness to cell-to-cell variability. In general, the proposed algorithm results in approximately 10× improvement in programming speed over standard algorithms that do not use the transistor gate to control memristor switching. In addition, after only two programming pulses (an initialization pulse followed by a programming pulse), the resulting conductance values are within 12% of the target values in all cases. Finally, endurance of more than 106 cycles is shown through open-loop (single pulses) programming across multiple conductance levels using the optimized gate voltage of the transistor. These results are relevant for applications that require high speed, accurate, and repeatable programming of the cells such as in neural networks and analog data processing.
Joule‐heating induced conductance‐switching is studied in VO2, a Mott insulator. Complementary in situ techniques including optical characterization, blackbody microscopy, scanning transmission X‐ray ...microscopy (STXM) and numerical simulations are used. Abrupt redistribution in local temperature is shown to occur upon conductance‐switching along with a structural phase transition, at the same current.
Nanoscale metal/oxide/metal switches have the potential to transform the market for nonvolatile memory and could lead to novel forms of computing. However, progress has been delayed by difficulties ...in understanding and controlling the coupled electronic and ionic phenomena that dominate the behaviour of nanoscale oxide devices. An analytic theory of the 'memristor' (memory-resistor) was first developed from fundamental symmetry arguments in 1971, and we recently showed that memristor behaviour can naturally explain such coupled electron-ion dynamics. Here we provide experimental evidence to support this general model of memristive electrical switching in oxide systems. We have built micro- and nanoscale TiO2 junction devices with platinum electrodes that exhibit fast bipolar nonvolatile switching. We demonstrate that switching involves changes to the electronic barrier at the Pt/TiO2 interface due to the drift of positively charged oxygen vacancies under an applied electric field. Vacancy drift towards the interface creates conducting channels that shunt, or short-circuit, the electronic barrier to switch ON. The drift of vacancies away from the interface annilihilates such channels, recovering the electronic barrier to switch OFF. Using this model we have built TiO2 crosspoints with engineered oxygen vacancy profiles that predictively control the switching polarity and conductance.
Therapeutically actionable molecular alterations are widely distributed across cancer types. The National Cancer Institute Molecular Analysis for Therapy Choice (NCI-MATCH) trial was designed to ...evaluate targeted therapy antitumor activity in underexplored cancer types. Tumor biopsy specimens were analyzed centrally with next-generation sequencing (NGS) in a master screening protocol. Patients with a tumor molecular alteration addressed by a targeted treatment lacking established efficacy in that tumor type were assigned to 1 of 30 treatments in parallel, single-arm, phase II subprotocols.
Tumor biopsy specimens from 5,954 patients with refractory malignancies at 1,117 accrual sites were analyzed centrally with NGS and selected immunohistochemistry in a master screening protocol. The treatment-assignment rate to treatment arms was assessed. Molecular alterations in seven tumors profiled in both NCI-MATCH trial and The Cancer Genome Atlas (TCGA) of primary tumors were compared.
Molecular profiling was successful in 93.0% of specimens. An actionable alteration was found in 37.6%. After applying clinical and molecular exclusion criteria, 17.8% were assigned (26.4% could have been assigned if all subprotocols were available simultaneously). Eleven subprotocols reached their accrual goal as of this report. Actionability rates differed among histologies (eg, > 35% for urothelial cancers and < 6% for pancreatic and small-cell lung cancer). Multiple actionable or resistance-conferring tumor mutations were seen in 11.9% and 71.3% of specimens, respectively. Known resistance mutations to targeted therapies were numerically more frequent in NCI-MATCH than TCGA tumors, but not markedly so.
We demonstrated feasibility of screening large numbers of patients at numerous accruing sites in a complex trial to test investigational therapies for moderately frequent molecular targets. Co-occurring resistance mutations were common and endorse investigation of combination targeted-therapy regimens.
The memristor, the fourth passive circuit element, was predicted theoretically nearly 40 years ago, but we just recently demonstrated both an intentional material system and an analytical model that ...exhibited the properties of such a device. Here we provide a more physical model based on numerical solutions of coupled drift‐diffusion equations for electrons and ions with appropriate boundary conditions. We simulate the dynamics of a two‐terminal memristive device based on a semiconductor thin film with mobile dopants that are partially compensated by a small amount of immobile acceptors. We examine the mobile ion distributions, zero‐bias potentials, and current–voltage characteristics of the model for both steady‐state bias conditions and for dynamical switching to obtain physical insight into the transport processes responsible for memristive behavior in semiconductor films.
A physical model of memristive behavior in semiconductor thin films is presented. The model is based on numerical solutions of coupled drift‐diffusion equations for electrons and ions with appropriate boundary conditions. Mobile ion distributions and current–voltage characteristics of the device for both steady‐state bias conditions and for dynamical switching are examined to obtain physical insight into the transport processes (see image).
A Pt/NbO x /TiO y /NbO x /TiN stack integrated on a 30 nm contact via shows a programming current as low as 10 nA and 1 pA for the set and reset switching, respectively, and a self-rectifying ratio ...as high as ∼105, which are suitable characteristics for low-power memristor applications. It also shows a forming-free characteristic. A charge-trap-associated switching model is proposed to account for this self-rectifying memrisive behavior. In addition, an asymmetric voltage scheme (AVS) to decrease the write power consumption by utilizing this self-rectifying memristor is also described. When the device is used in a 1000 × 1000 crossbar array with the AVS, the programming power can be decreased to 8.0% of the power consumption of a conventional biasing scheme. If the AVS is combined with a nonlinear selector, a power consumption reduction to 0.31% of the reference value is possible.
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